Gallipoli's Naval Secret: The Search for the AE2

Mark Spencer
Sydney Papers, The 11 ( 1) 48

1999
Intergenerational Homelessness and Lifetime Experiences of Homelessness in Australia: Evidence for the Need for Early Interventions

Catherine Forbes , Catherine Spooner , Elizabeth Conroy , Paul Flatau
Parity 23 ( 7) 47

1
2010
Experiences of Homelessness among Adult Men in Sydney: Findings from the Michael Project Research Study

Paul Flatau , Bridget Spicer , Anne Hampshire , Kathryn di Nicola
Parity 23 ( 7) 11

2010
Measurement of stress in semiconductor materials using the photoelastic effect

P. Z. Zhou , G. L. Harris , M. G. Spencer , Keith H. Jackson
conference on lasers and electro-optics

1
1988
Observation of deep levels in cubic silicon carbide

Peizhen Zhou , M. G. Spencer , G. L. Harris , Konjit Fekade
Applied Physics Letters 50 ( 19) 1384 -1385

31
1987
High Breakdown Voltage and Low Specific On-resistance C-doped GaN-on-sapphire HFETs for Low-loss and High-power Switching Applications

Y. C. Choi , M. Pophristic , M. G. Spencer , L. F. Eastman
applied power electronics conference 1264 -1267

1
2007
Perturbation of charges in AlGaN/GaN heterostructures by ultraviolet laser illumination

G. Koley , Ho-Young Cha , Jeonghyun Hwang , W. J. Schaff
Journal of Applied Physics 96 ( 8) 4253 -4262

13
2004
Modification of Indium Tin Oxide for Improved Hole Injection in Organic Light Emitting Diodes

Y. Shen , D. B. Jacobs , G. G. Malliaras , G. Koley
Advanced Materials 13 ( 16) 1234 -1238

160
2001
186
2001
Symmetry of the Si shallow donor state in AlAs/GaAs and Al x Ga 1-x As/GaAs heterostructures

E. Glaser , T. A. Kennedy , R. S. Sillmon , M. G. Spencer
Physical Review B 40 ( 5) 3447 -3450

28
1989
Cubic SiC: The forgotten polytype

H. N. Jayatirtha , M. G. Spencer
MRS Proceedings 410

5
1995
Formation and high frequency CV-measurements of aluminum/aluminum nitride/6H silicon carbide structures

C. -M. Zetterling , K. Wongchotigul , M. G. Spencer , C. I. Harris
MRS Proceedings 423 667 -672

12
1996
Fabrication and characterization of high breakdown voltage AlGaN∕GaN heterojunction field effect transistors on sapphire substrates

YC Choi , M Pophristic , B Peres , MG Spencer
Journal of Vacuum Science & Technology B 24 ( 6) 2601 -2605

24
2006
C-doped semi-insulating GaN HFETs on sapphire substrates with a high breakdown voltage and low specific on-resistance

YC Choi , J Shi , M Pophristic , MG Spencer
Journal of Vacuum Science & Technology B 25 ( 6) 1836 -1841

21
2007
Ohmic contact using the Si nano-interlayer for undoped-AlGaN/GaN heterostructures

Ho-Young Cha , X. Chen , H. Wu , W. J. Schaff
Journal of Electronic Materials 35 ( 3) 406 -410

8
2006
Annealing of Ion Implantation Damage in SiC Using a Graphite Mask

Chris Thomas , Crawford Taylor , James Griffin , William L. Rose
MRS Proceedings 572 ( 1) 45 -50

24
1999
Investigation of the Morphology of AlN Films Grown on Sapphire by MOCVD Using Transmission Electron Microscopy

WL Samey , L Salamanca-Ribal , P Zhou , S Wilson
MRS Proceedings 572 ( 1) 339 -344

1999
Effect of Ge on SiC Film Morphology in SiC/Si Films Grown by MOCVD

WL Samey , L Salamanca-Riba , P Zhou , MG Spencer
MRS Proceedings 572 185

1999