Extending the reliability of SiO2-Based dielectric to the nanometer limit
Emest Y WU , Jordi Suñé
Proceedings-Electrochemical Society 213 -223
1
2004
Correction for stress induced leakage current in dielectric reliability evaluations
Steven W Mittl , Y Yu Ernest
4
2015
Ultra-thin oxide reliability for ULSI applications
Ernest Y Wu , James H Stathis , Liang-Kai Han
Semiconductor Science and Technology 15 ( 5) 425 -435
151
2000
Measuring dielectric breakdown in a dynamic mode
Eduard A Cartier , Charles LaRow , Travis S Merrill , Ernest Y Wu
2014
Dielectric reliability assessment for advanced semiconductors
Baozhen Li , James H Stathis , Ernest Y Wu
2
2015
Determining appropriateness of sampling integrated circuit test data in the presence of manufacturing variations
Griselda Bonilla , Baozhen Li , Barry P Linder , James H Stathis
1
2016
Test structures for dielectric reliability evaluations
David G Brochu , Roger A Dufresne , Baozhen Li , Barry P Linder
2018
Photon emission microscopy of HfO2 ReRAM cells
Franco Stellari , Ernest Y Wu , Takashi Ando , Martin M Frank
ISTFA 2021 115 -121
3
2021
Filament Localization and Characterization in Hf02 ReRAM Cells using Laser Stimulation
Franco Stellari , Ernest Y Wu , Martin M Frank , Leonidas E Ocala
ESSDERC 2022-IEEE 52nd European Solid-State Device Research Conference (ESSDERC) 293 -296
1
2022
Photon Emission Microscopy of Amorphous HfO2 ReRAM Cells
Franco Stellari , Leonidas E Ocola , Ernest Y Wu , Takashi Ando
2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) 1 -5
1
2022
RRAM filament spatial localization using a laser stimulation
Franco Stellari , Ernest Y Wu , Takashi Ando , Peilin Song
2024
Ferroelectric Film with Buffer Layers for Improved Reliability of Metal-Insulator-Metal Capacitor
Kisik Choi , Paul Charles Jamison , Takashi Ando , Lawrence A Clevenger
2023
Reversing A Decades‐Long Scaling Law of Dielectric Breakdown using Hydrogen‐Plasma‐Treated HfO2 ReRAM Devices
Ernest Y Wu , Takashi Ando , Paul Jamison
Advanced Electronic Materials 9 ( 10) 2300296 -2300296
2023
Mapping and statistical analysis of filaments locations in amorphous HfO2 ReRAM cells
Franco Stellari , Ernest Y Wu , Leonidas E Ocola , Takashi Ando
Microelectronics Reliability 146 114982 -114982
2023
Reversing A Decades-Long Scaling Law of Dielectric Breakdown using Hydrogen-Plasma-Treated HfO
Ernest Y Wu , Takashi Ando , Paul Jamison
2023
Optimization of integrated circuit reliability
Carole D Graas , Nazmul Habib , Deborah M Massey , John G Massey
2
2017
Optimization of integrated circuit reliability
Carole D Graas , Nazmul Habib , Deborah M Massey , John G Massey
1
2021
Optimization of integrated circuit reliability
Carole D Graas , Nazmul Habib , Deborah M Massey , John G Massey
2020
Reliability Wearout Mechanisms in Advanced CMOS Technologies
Alvin W Strong , Ernest Y Wu , Rolf-Peter Vollertsen , Jordi Sune
64
2009
Experimental evidence of T/sub BD/ power-law for voltage dependence of oxide breakdown in ultrathin gate oxides
Ernest Y Wu , A Vayshenker , E Nowak , J Sune
IEEE Transactions on Electron Devices 49 ( 12) 2244 -2253
112
2002