j. grajal de la fuente
机构: Universidad Politécnica de Madrid
每年引用次数
引用次数
引用: 4,405
H-指数: 36
I10-指数 : 93
出版物: 242
Fabrication and performance of AlGaN/GaN HEMTS.
Ingrid Moerman , A Jimenez , E Monroy , E Munoz
4th International Conference on Materials for Microelectronics and Nanoengineering, 10-1 June 2002, Espoo, Finland 25 -28
2002
Analysis of noise spectra in GaAs and GaN Schottky barrier diodes
D Pardo , J Grajal , S Pérez , B Mencía
Semiconductor Science and Technology 26 ( 5) 055023
4
2011
Analysis and modelling of GaN Schottky-based circuits at millimeter wavelengths
D Pardo , J Grajal
Semiconductor Science and Technology 30 ( 11) 115016
2015
Nonequilibrium transport in GaAs Schottky mixers at 2.5 THz
D Pardo , J Grajal , S Pérez
Journal of Physics: Conference Series 647 ( 1) 012038
2015
Physics-Based Design and Optimization of Schottky Diode Frequency Multipliers for Terahertz Applications
J V Siles , J Grajal
IEEE Transactions on Microwave Theory and Techniques 58 ( 7) 1933 -1942
117
2010
Two prototypes of adaptive antenna receivers for mobile systems
J I Alonso , J M Blas , J Ramos , L E Garcia
26th European Microwave Conference, 1996 1 238 -241
1
1996
InGaAs Schottky technology for THz mixers
D Pardo , H Wang , H Sanghera , B Alderman
Proc. 28th Int. Symp. Space Terahertz Technol. 1 -4
2
2017
Local oscillator requirements and noise performance of a cryogenic 360 GHz Schottky diode subharmonic mixer
D Pardo , H Wang , B Ellison , P Huggard
High frequency SAW devices on AlGaN: fabrication, characterization and integration with optoelectronics
T Palacios , F Calle , J Grajal , E Monroy
2002 IEEE Ultrasonics Symposium, 2002. Proceedings. 1 57 -60
39
2002
AlGaN/GaN HEMTS: material, processing, and characterization
F Calle , T Palacios , E Monroy , J Grajal
Journal of Materials Science: Materials in Electronics 14 ( 5) 271 -277
5
2003
Sub-micron technology in group-III nitrides: application to electronic devices
T Palacios , F Calle , E Monroy , J Grajal
2001
Fabrication and characterization of AlGaN/GaN HEMTs
F Calle , E Monroy , JM Tirado , R Ranchal
2001
Fabrication and characterization of AlGaN/GaN HEMTs
JM Tirado , A Jiménez , AF Braña , E Muñoz
4 Conference on Electron Devices, CDE03
1
2003
Improved HEMT devices from AlGaN/GaN heterojunctions using AIN interlayers
A Jiménez , JM Tirado , Z Bougrioua , Alejandro F Braña de Cal
2003
Impact of Fin Width on Performance in Nanometer-scale InGaAs FinFETs
X Cai , A Vardi , J Grajal , JA del Alamo
Electronic, Magnetic, Memory Devices 112 -112
Performance evaluation of multiplication chains up to THz frequencies
J Grajal , Jose Vicente Siles , V Krozer , E Sbarra
Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004. 197 -198
10
2004
Optimization of millimeter frequency multipliers by incorporation of numerical modelling into circuit simulators.
J Grajal , V Krozer , F Maldonado , E González
GAAS'98, 6th European Gallium Arsenide and Related III̵V Compounds Applications Symposium
2
1998
SPECIAL ISSUE ON TERAHERTZ ELECTRONICS-Modeling and Design Aspects of Millimeter-Wave and Submillimeter-Wave Schottky Diode Varactor Frequency Multipliers
J Grajal , V Krozer , E Gonzalez , F Maldonado
IEEE Transactions on Microwave Theory and Techniques 48 ( 4) 700 -711
2000
Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Anisotropy-induced polarization mixture of surface acoustic waves in GaN/c-sapphire heterostructures
J Pedros , F Calle , J Grajal , RJ Jimenez Rioboo
Physical Review-Section B-Condensed Matter 72 ( 7) 75306 -75306
2005