引用次数
引用: 6,834
H-指数: 45
I10-指数 : 157
出版物: 349
Study on SiGe nanowire shape engineering and Ge condensation
Fa-Jun Ma , Boon Seng Chia , Subhash C. Rustagi , Ganesh C. Samudra
international conference on enabling science and nanotechnology 1 -2
2010
Optimal power converter topology for powering future microprocessor demands
R.P. Singh , A.M. Khambadkone , S.S. Samudra , Y.C. Liang
conference of the industrial electronics society 1 530 -535
6
2004
SELF-CONSISTENT SIMULATION OF QUANTUM DOT FLASH MEMORY DEVICE WITH SiO2 AND HfO2 DIELECTRICS
CHEE CHING CHONG , KAI HONG ZHOU , PING BAI , ER PING LI
International Journal of Nanoscience 04 ( 02) 171 -178
2005
Silicon nano-wire impact ionization transistors with multiple-gates for enhanced gate control and performance
Eng-Huat Toh , Grace Huiqi Wang , Chen Shen , Ming Zhu
international semiconductor device research symposium 1 -2
2007
A complementary-I-MOS technology featuring SiGe channel and i-region for enhancement of impact-ionization, breakdown voltage, and performance
Eng-Huat Toh , Grace Huiqi Wang , Lap Chan , Guo-Qiang Lo
european solid state device research conference 295 -298
4
2007
Uniaxial strained silicon n-FETs on silicon-germanium-on-insulator substrates with an e-Si 0.7 Ge 0.3 stress transfer layer and source/drain stressors for performance enhancement
Grace Huiqi Wang , Eng-Huat Toh , Yong-Lim Foo , S. Tripathy
european solid state device research conference 311 -314
3
2007
Simulation of logarithmic time dependence of hot carrier degradation in PMOSFETs
C H Ling , G S Samudra , B P Seah
Semiconductor Science and Technology 10 ( 12) 1659 -1666
3
1995
Modelling of transconductance-to-current ratio (gm/ID) analysis on double-gate SOI MOSFETs
K Rajendran , G S Samudra
Semiconductor Science and Technology 15 ( 2) 139 -144
21
2000
Parasitic capacitance characteristics of deep submicrometre grooved gate MOSFETs
S Sreelal , C K Lau , G S Samudra
Semiconductor Science and Technology 17 ( 3) 179 -188
14
2002
Determination of LDD MOSFET drain resistance from device simulation
G.S Samudra , B.P Seah , C.H Ling
Solid-state Electronics 39 ( 5) 753 -758
8
1996
A physics-based Compact Model for I-MOS Transistors
SHEN Chen , TOH Eng-Huat , LIN Jianqiang , HENG Chun-Huat
Extended abstracts of the... Conference on Solid State Devices and Materials 2007 608 -609
1
2007
A Double-Gate Tunneling Field-Effect Transistor with Silicon-Germanium Source for High-Performance, Low Standby Power, and Low Power Technology Applications
TOH Eng-Huat , WANG Grace Huiqi , CHAN Lap , SYLVESTER Dennis
Extended abstracts of the... Conference on Solid State Devices and Materials 2007 894 -895
2007
Schottky barrier height modulation for nickel silicide on n-Si (100) using antimony (Sb) segregation
WONG Hoong-Shing , CHAN Lap , SAMUDRA Ganesh , YEO Yee-Chia
Extended abstracts of the... Conference on Solid State Devices and Materials 2007 366 -367
2
2007
Novel tellurium co-implantation and segregation for effective source/drain contact resistance reduction and gate work function modulation in n-FinFETs
Ganesh S. Samudra , Shao-Ming Koh , Yinjie Ding , Yee-Chia Yeo
symposium on vlsi technology 86 -87
4
2011
Power MOSFET Having Enhanced Breakdown Voltage (US patent, US 6,853,033)
Ganesh S. Samudra , Yung C. Liang , K.P. Gan , Xin Yang
2005
In-Situ Surface Passivation and Metal-Gate/High-κDielectric Stack Formation for N-channel Gallium Arsenide Metal-Oxide-Semiconductor Field-Effect Transistors
Hock-Chun Chin , Ming Zhu , Sung-Jin Whang , Chih-Hang Tung
international symposium on vlsi technology, systems, and applications 26 -27
1
2008
Strained FinFETs with In-situ Doped Si 1-y C y Source and Drain Stressors: Performance Boost with Lateral Stressor Encroachment and High Substitutional Carbon Content
Tsung-Yang Liow , Kian-Ming Tan , Doran Weeks , Rinus T. P. Lee
international symposium on vlsi technology, systems, and applications 126 -127
2008
New Tellurium implant and segregation for contact resistance reduction and single metallic silicide technology for independent contact resistance optimization in n- and p-FinFETs
Shao-Ming Koh , Eugene Yu Jin Kong , Bin Liu , Chee-Mang Ng
international symposium on vlsi technology systems and applications 1 -2
2
2011
Numerical analysis of injection level dependent effective lifetime on 125 mm undiffused lifetime samples
Fa-Jun Ma , Ziv Hameiri , Ganesh S. Samudra , Marius Peters
photovoltaic specialists conference 3313 -3316
4
2014
A VLSI Design for Implementation of Transform Domain Adaptive Filters
Ali Najafi , Behrouz Farhang-Boroujeny , Ganesh S. Samudra
Vlsi Design 9 ( 2) 119 -133
1999