Light emitters fabricated on bulk GaN substrates. Challenges and achievements.
Piotr Perlin , M. Leszczy ski , P. Prystawko , R. Czernecki
MRS Proceedings 693 ( 1) 561 -566
2001
Półprzewodniki azotkowe: rewolucja w optoelektronice
M. Leszczyński
Elektronika : konstrukcje, technologie, zastosowania 45 45 -47
2004
Zastosowanie niebieskich laserów do detekcji substancji śladowych
R. Czernecki , P. Perlin , M. Leszczyński , J. Wojtas
Elektronika : konstrukcje, technologie, zastosowania 49 101 -104
2008
Inhomogeneities of InGaN/GaN MOVPE multi quantum wells grown with a two temperatures process studied by transmission electron microscopy
S. Kret , F. Ivaldi , K. Sobczak , R. Czernecki
Physica Status Solidi (a) 207 ( 5) 1101 -1104
10
2010
Latest developments in AlGaInN laser diode technology for defence applications
S. P. Najda , P. Perlin , T. Suski , L. Marona
Electro-Optical Remote Sensing, Photonic Technologies, and Applications VI 8542
1
2012
60mW continuous-wave operation of InGaN laser diodes made by plasma-assisted molecular-beam epitaxy
C. Skierbiszewski , P. Wiśniewski , M. Siekacz , P. Perlin
Applied Physics Letters 88 ( 22) 221108
49
2006
Optical activation and diffusivity of ion-implanted Zn acceptors in GaN under high-pressure, high-temperature annealing
T. Suski , J. Jun , M. Leszczyński , H. Teisseyre
Journal of Applied Physics 84 ( 2) 1155 -1157
29
1998
Degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals
L. Marona , P. Wisniewski , P. Prystawko , I. Grzegory
Applied Physics Letters 88 ( 20) 201111
72
2006
The influence of lattice parameter variation on microstructure of GaN single crystals
M. Krysko , M. Sarzynski , J. Domagała , I. Grzegory
Journal of Alloys and Compounds 401 ( 1-2) 261 -264
28
2005
Growth and Properties of Bulk Single Crystals of GaN
T. Suski , P. Perlin , M. Leszczyński , H. Teisseyre
MRS Proceedings 395
6
1995
Lattice parameters, density and thermal expansion of InN microcrystals grown by the reaction of nitrogen plasma with liquid indium
W. Paszkowicz , J. Adamczyk , S. Krukowski , M. Leszczyński
Philosophical Magazine 79 ( 5) 1145 -1154
30
1999
GaN lasers for quantum information science and technology (QIST) applications
S.P. Najda , P. Perlin , M. Leszczyński , S. Stanczyk
OSA Quantum 2.0 Conference (2020), paper QW6B.17
2020
Electro-structural evolution and Schottky barrier height in annealed Au/Ni contacts onto p-GaN
G. Greco , P. Prystawko , M. Leszczyński , R. Lo Nigro
Journal of Applied Physics 110 ( 12) 123703
42
2011
High Pressure Freeze-out of Electrons in Undoped GaN Crystal. Proof of Existence of Resonant Donor State (Nitrogen Vacancy)
P. Perlin , H. Teisseyre , T. Suski , M. Leszczyński
Acta Physica Polonica A 87 ( 1) 141 -143
1995
POLARITY RELATED PROBLEMS IN GROWTH OF GAN HOMOEPITAXIAL LAYERS
M. Leszczyński , P. Prystawko , A. Śliwinski , T. Suski
Acta Physica Polonica A 94 ( 3) 427 -430
3
1998
Epitaxial Layers Versus Bulk Single Crystals of GaN. Temperature Studies of Lattice Parameters and Energy Gap
H. Teisseyre , P. Perlin , M. Leszczyński , T. Suski
Acta Physica Polonica A 87 ( 2) 403 -406
1
1995
Cubic MnTe - Growth by Molecular Beam Epitaxy and Basic Structural Characterization
A.K. Zakrzewski , E. Janik , E. Dynowska , M. Leszczyński
Acta Physica Polonica A 87 ( 2) 433 -436
6
1995
Crystallographic Properties of Bulk GaN Crystals Grown at High Pressure
M. Leszczyński , I. Grzegory , M. Bockowski , J. Jun
Acta Physica Polonica A 88 ( 4) 799 -802
4
1995
Lattice Constant of Doped Semiconductor
M. Leszczyński , E. Litwin-Staszewska , T. Suski , J. Bąk-Misiuk
Acta Physica Polonica A 88 ( 5) 837 -840
46
1995
Transformation of AlGaAs/GaAs Interface under Hydrostatic Pressure
J. Bąk-Misiuk , J. Domagała , J. Trela , M. Leszczyński
Acta Physica Polonica A 89 ( 3) 405 -409
5
1996