Semiconductor constructions, memory arrays, methods of forming semiconductor constructions and methods of forming memory arrays
Cinzia Perrone , Fabio Pelizzer
2014
"Effects of the crystallization statistics on programming distributions in phase-change memory arrays"
D. Ielmini , D. Mantegazza , A. Pirovano , F. Pellizzer
ICMTD 2007 43 -46
2
2007
Programming and disturb characteristics in nonvolatile phase-change memories
R. Bez , A. Redaelli , A. Pirovano , F. Pellizzer
NVSM Non·Volatile Semiconductor Memory Workshop 26 -27
1
2004
A new model of gate capacitance as a simple tool to extract MOS parameters
L. Larcher , P. Pavan , F. Pellizzer , G. Ghidini
IEEE Transactions on Electron Devices 48 ( 5) 935 -945
32
2001
A Phase Change Memory Compact Model for Multilevel Applications
D. Ventrice , P. Fantini , Andrea Redaelli , A. Pirovano
IEEE Electron Device Letters 28 ( 11) 973 -975
56
2007
Analysis of phase distribution in phase-change nonvolatile memories
D. Ielmini , A.L. Lacaita , A. Pirovano , F. Pellizzer
IEEE Electron Device Letters 25 ( 7) 507 -509
120
2004
Electronic switching effect and phase-change transition in chalcogenide materials
A. Redaelli , A. Pirovano , F. Pellizzer , A.L. Lacaita
IEEE Electron Device Letters 25 ( 10) 684 -686
349
2004
Parasitic reset in the programming transient of PCMs
D. Ielmini , D. Mantegazza , A.L. Lacaita , A. Pirovano
IEEE Electron Device Letters 26 ( 11) 799 -801
59
2005
4-Mb MOSFET-selected phase-change memory experimental chip
F. Bedeschi , R. Bez , C. Boffino , E. Bonizzoni
european solid-state circuits conference 207 -210
178
2004
Program circuit for a phase change memory array with 2 MB/s write throughput for embedded applications
G. De Sandre , L. Bettini , E. Calvetti , G. Giacomi
european solid-state circuits conference 198 -201
12
2008
Analysis of plasma damage on phase change memory cells
F. Pellizzer , A. Spandre , S. Alba , A. Pirovano
international conference on ic design and technology 227 -230
3
2004
Reliability characterization of Phase Change Memory
B. Gleixner , F. Pellizzer , R. Bez
non volatile memory technology symposium 7 -11
54
2009
Numerical Implementation of Low Field Resistance Drift for Phase Change Memory Simulations
A. Redaelli , A. Pirovano , A. Locatelli , F. Pellizzer
2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design 39 -42
28
2008
Phase-change Memories
R. Bez , A. Pirovano , F. Pellizzer
Springer London 177 -188
3
2005
Switching and programming dynamics in phase-change memory cells
D. Ielmini , D. Mantegazza , A.L. Lacaita , A. Pirovano
Solid-state Electronics 49 ( 11) 1826 -1832
44
2005
Explanation of programming distributions in phase-change memory arrays based on crystallization time statistics
D. Mantegazza , D. Ielmini , A. Pirovano , A.L. Lacaita
Solid-state Electronics 52 ( 4) 584 -590
15
2008
Phase-change memory technology with self-aligned μTrench cell architecture for 90 nm node and beyond
A. Pirovano , F. Pellizzer , I. Tortorelli , A. Riganó
Solid-state Electronics 52 ( 9) 1467 -1472
21
2008
Impact of crystallization statistics on data retention for phase change memories
A. Redaelli , D. Ielmini , A.L. Lacaita , F. Pellizzer
international electron devices meeting 742 -745
34
2005
Assessment of threshold switching dynamics in phase-change chalcogenide memories
D. Ielmini , A.L. Lacaita , D. Mantegazza , F. Pellizzer
international electron devices meeting 877 -880
13
2005
Electronic switching effect in phase-change memory cells
A. Pirovano , A.L. Lacaita , D. Merlani , A. Benvenuti
international electron devices meeting 923 -926
25
2002