Impact of Fast Interface States on Effective Mobility of Heavily-Doped MOSFET's
Guzzetti , Bez , Lacaita , Perron
european solid state device research conference 833 -836
1996
Soft Programming in Scaled Flash EEPROM Cells
Sangiorgi , Selmi , Bez , Esseni
european solid state device research conference 549 -552
1995
Non Volatile Memories-Status and Emerging Trends
Melanotte , Crisenza , Bez
european solid state device research conference 603 -612
1991
A Triple-well Architecture for Low-voltage Operation in Submicron CMOS Devices
Zabberoni , Maurelli , Bez , Losavio
european solid state device research conference 613 -616
1996
Applications of a Novel Hot Carrier Injection Model in Flash EEPROM Design
R. Bez , A. Mathewson , F. Piccinini , G.L. Mei
european solid state device research conference 503 -506
3
1994
Series resistance effects on EPROM programming
D. Cantarelli , R. Bez , P. Cappelletti , L. Ravazzi
european solid state device research conference 165 -168
1990
Experimental Analysis of Polarization in the Hot-Carrier Luminescence of Silicon Devices
A. Pieracci , L. Selmi , R. Bez , M. Lanzoni
european solid state device research conference 421 -424
1
1994
The Impact of Device Design on the Substrate Enhanced Gate Current of VLSI MOSFET's
L. Selmi , R. Bez , D. Esseni
european solid-state device research conference 288 -291
1
1998
Numerical Simulation of Non-Volatile Memories
R. Bez , S. Keeney , A. Mathewson , F. Piccinini
european solid state device research conference 601 -608
1993
"Effects of the crystallization statistics on programming distributions in phase-change memory arrays"
D. Ielmini , D. Mantegazza , A. Pirovano , F. Pellizzer
ICMTD 2007 43 -46
2
2007
Programming and disturb characteristics in nonvolatile phase-change memories
R. Bez , A. Redaelli , A. Pirovano , F. Pellizzer
NVSM Non·Volatile Semiconductor Memory Workshop 26 -27
1
2004
European Patent application no.00830546.8, filing date july 31 2000
Luca Selmi , R. Bez , David Esseni , A. Modelli
2000
Bipolar Flash Memory (BipFlash) - A new Architecture for a Non-Volatile Memory with a High Programming Efficiency
Luca Selmi , R. Bez , David Esseni , A. Modelli
2002
Zn-O based selectors for crosspoint mem devices
B. Kutrzeba-Kotowska , S. Spiga , M. Godlewski , P. Lugli
non volatile memory technology symposium
2009
Flash memory and beyond
R. Bez , P. Cappelletti
symposium on vlsi technology 84 -87
20
2005
90nm Phase Change Technology with μTrench and Lance Cell Elements
G. Atwood , R. Bez
international symposium on vlsi technology, systems, and applications 1 -2
21
2007
Electron mobility in ULSI MOSFETs: effect of interface traps and oxide nitridation
L. Perron , A.L. Lacaita , A. Pacelli , R. Bez
IEEE Electron Device Letters 18 ( 5) 235 -237
11
1997
A new erasing method for a single-voltage long-endurance flash memory
R. Bez , D. Cantarelli , L. Moioli , G. Ortolani
IEEE Electron Device Letters 19 ( 2) 37 -39
8
1998
Resistive switching characteristics of NiO films deposited on top of W or Cu pillar bottom electrodes
C. Dumas , D. Deleruyelle , A. Demolliens , Ch. Muller
Thin Solid Films 519 ( 11) 3798 -3803
10
2011
Emerging memory technology perspective
R. Bez , P. Cappelletti
international symposium on vlsi design, automation and test 1 -2
6
2012