Osamu Nakatsuka (中塚 理)
机构: Graduate School of Engineering, Nagoya University
每年引用次数
引用次数
引用: 4,568
H-指数: 32
I10-指数 : 109
出版物: 438
MBE growth and crystalline properties of Ge1-xSnx heteroepitaxial layers
Zaima S , Vandervorst Wilfried , Caymax Matty , Loo Roger
2011
Towards an understanding of the atomic-scale surface properties of Ge1-xSnx films
S Zaima , O Nakatsuka , Kristiaan Temst , Clement Merckling
2011
Impact of Sn on Ga activation in heteroepitaxial Ge1-xSnx layer
S Zaima , O Nakatsuka , Federica Gencarelli , Trudo Clarysse
59th Spring Meeting of the Japan Society of Applied Physics
2012
Suppressive Effect of Interface Reaction and Water Absorption by Al Incorporation into Pr-oxide Film
W Takeuchi , K Furuta , K Kato , M Sakashita
Journal of Physics: Conference Series 417 ( 1) 012017
2013
Physical and electrical properties of ultra-thin nickel silicide Schottky diodes on Si (100)
Y Tamura , R Yoshihara , K Kakushima , H Nohira
Journal of Physics: Conference Series 417 ( 1) 012015
5
2013
A. Molle, G. Brammertz, A. Dimoulas and C. Marchiori Preface to Symposium H: Post-Si-CMOS electronic devices: The role of Ge and III–V materials 323
SW Bedell , N Daval , A Khakifirooz , P Kulkarni
Microstructures in directly bonded Si substrates
Y Ohara , T Ueda , A Sakai , O Nakatsuka
Solid-state electronics 53 ( 8) 837 -840
6
2009
ECS Trans.
S Takeuchi , Y Shimura , T Nishimura , B Vincent
ECS Trans 33 529 -529
16
2010
Microelect
B Vincent , Y Shimura , S Takeuchi , T Nishimura
Eng 88 342 -342
8
2011
Formation of Ni (Ge1-ySny)/Ge1-xSnx/Ge contact for Ge1-xSnx source/drain Stressor
T Nishimura , O Nakatsuka , Y Shimura , S Takeuchi
2010
Effect of Ge atoms on interfacial reactions of Ti/ and Zr/Si sub 1- x Ge sub x/Si contacts
H Iwano , H Hayashi , M Yoshinaga , O Nakatsuka
Advanced Metallization Conference in 1998(AMC 1998) 599 -604
1998
Molecular beam deposition of Al {sub 2} O {sub 3} on p-Ge (001)/Ge {sub 0.95} Sn {sub 0.05} heterostructure and impact of a Ge-cap interfacial layer
C Merckling , A Franquet , B Vincent , W Vandervorst
Applied Physics Letters 98 ( 19)
2011
Meeting (ISTDM 2004), Kleist-Forum, Frankfurt (Oder), Germany, 16^ 19 May: From Materials and ProcessTechnology to Device and Circuit Design
S Takeuchi , O Nakatsuka , Y Wakazono , A Sakai
Materials Science in Semiconductor Processing 8 ( 1-3)
2005
High Purity and High Mobility Semiconductors 13
Eddy Simoen , C Claeys , O Nakatsuka , R Falster
The Electrochemical Society
2014
Band alignment at interfaces of amorphous Al {sub 2} O {sub 3} with Ge {sub 1− x} Sn {sub x}-and strained Ge-based channels
H-Y Chou , M Houssa , A Stesmans , B Vincent
Applied Physics Letters 104 ( 20)
2014
Molecular beam passivation of Ge< Sn> compounds: surface, interface & gate stack studies
Clement Merckling , X Sun , Y Shimura , Alexis Franquet
2011
Defect evaluation in strain-relaxed Ge</sub> 0.947<//sub> Sn</sub> 0.053<//sub> grown on (001) Si
S Gupta , Y Shimura , O Richard , B Douhard
Applied Physics Letters 113 ( 19)
2018
Strain-relaxation mechanisms of SiGe layers formed by two-step growth on Si (0 0 1) substrates
T Egawa , A Sakai , T Yamamoto , N Taoka
Applied surface science 224 ( 1-4) 104 -107
23
2004
Sub-300 o C fabrication of poly-GeSn junctionless tri-gate p-FETs enabling sequential 3D integration of CMOS circuits
M Kurosawa , Y Kamata , H Ikenoue , N Taoka
Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials
7
2014
PS-1-13 (Late News)
K Takahashi , M Kurosawa , H Ikenoue , M Sakashita