引用次数
引用: 27,363
H-指数: 49
I10-指数 : 156
出版物: 592
Local electronic and optical behavior of ELO a-plane GaN
V. Kasliwal , U. Ozgur , J.C. Moore , H. Morkoc
Bulletin of the American Physical Society
2007
Gate Bias Dependent Two Layer Conduction in InAlN/AlN/GaN Heterostructures
Igor Vurgaftman , Xianfeng Ni , Cagliyan Kurdak , Xing Li
Bulletin of the American Physical Society 2010
2010
Zinc Oxide: Fundamentals, Materials and Device Technology
Ümit Özgür , Hadis Morkoç
571
2009
Ultrafast carrier relaxation in GaN, In 0.05 Ga 0.95 N , and an In 0.07 Ga 0.93 N / In 0.12 Ga 0.88 N multiple quantum well
Henry O. Everitt , Ümit Özgür
Physical Review B 67 ( 15) 155308
21
2003
Ferromagnetism in ZnO- and GaN-Based Diluted Magnetic Semiconductors: Achievements and Challenges This paper reports on the current status of studies of optoelectronic devices that have been developed by doping with rare-earth and transition elements.
Donald J. Silversmith , Natalia Izyumskaya , Umit Ozgur , Hadis Morkoc
2010
ZnO Devices and Applications: A Review of Current Status and Future Prospects The possible importance of zinc-oxide-based optoelectronic devices is reviewed in this paper, which places special emphasis on the need to achieve p-type ZnO.
Umit Ozgur , Daniel Hofstetter , Hadis Morkoc
1
2010
GaN-Based Light-Emitting Diodes: Efficiency at High Injection Levels Highly efficient, high-brightness LEDs operating at high efficiency are taking over automobile lighting and signaling by demonstrating the advantages of their superior capabilities.
Xianfeng Ni , Xing Li , Umit Ozgur , Hadis Morkoc
2010
High-field electron transport in bulk ZnO
M. Toporkov , L. Ardaravičius , V. Avrutin , Ü. Özgür
arXiv: Materials Science
2016
Effect of nano‐porous SiNx interlayer on propagation of extended defects in semipolar (112¯2)‐orientated GaN
Natalia Izyumskaya , Jürgen Christen , Ümit Özgür , Frank Bertram
Physica Status Solidi (c) 14 ( 8)
2017
Microwave Ferrites, Part 1: Fundamentals and self biasing
Yahya Alivov , Ümit Özgür , Hadis Morkoç
3
2009
Control of Coherent Acoustic Phonons in InGaN Multiple Quantum Wells
Henry O. Everitt , Chang-Won Lee , Umit Ozgur
7
2000
Control of Coherent Acoustic Phonons
Henry O. Everitt , Chang-Won Lee , Umit Ozgur
arXiv: Mesoscale and Nanoscale Physics
2000
Direct-gap group iv alloy nanocrystals with composition-tunable energy gaps and near-infrared photoluminescence
Indika U. Arachchige , Umit Ozgur , Venkatesham Tallapally , Denis O. Demchenko
2019
Plasmonic Titanium Nitride via Atomic Layer Deposition: A Low-Temperature Route.
Kai Ding , Natalia Izyumskaya , Nathaniel Kinsey , Ümit Özgür
arXiv: Applied Physics
2019
Low-temperature growth of Al-doped ZnO by atomic layer deposition for plasmonics (Conference Presentation)
Dhruv Fomra , Kai Ding , Vitaliy S Avrutin , Natalia Izyumskaya
Oxide-based Materials and Devices XI 11281 1128119
2020
Illumination and annealing characteristics of two-dimensional electron gas systems in metal-organic vapor-phase epitaxy grown AlGaN/AlN/GaN heterostructures
N. Biyikli , X. F. Ni , U. Ozgur , Y. Fu
arXiv: Materials Science
8
2006
Measurement of AlxGa1-xN refractive indices
G. Webb-Wood , H. O. Everitt , F. Yun , Ü. Özgür
ICNS-4: International Conference on Nitride Semiconductors 188 ( 2) 793 -797
2001
Comparative study of MBE- and ALD-deposited doped zinc oxide
Dhruv Fomra , Kai Ding , Vitaliy Avrutin , Ümit Özgür
Oxide-based Materials and Devices XII 11687 1168711
2021
DC and microwave performance of BeMgZnO/ZnO heterostructure field effect transistors
Kai Ding , Vitaliy Avrutin , Natalia Izyumskaya , Ümit Özgür
Oxide-based Materials and Devices XII 11687
2021
A Platform for Complementary Metal‐Oxide‐Semiconductor Compatible Plasmonics: High Plasmonic Quality Titanium Nitride Thin Films on Si (001) with a MgO Interlayer
Kai Ding , Dhruv Fomra , Alexander V Kvit , Hadis Morkoç
Advanced Photonics Research 2000210
2021