Yuh-Renn Wu
机构: Professor of Electrical Engineering, National Taiwan University
主页: ntu.edu.tw
每年引用次数
引用次数
引用: 5,121
H-指数: 37
I10-指数 : 109
出版物: 278
Study of polarization properties of light emitted from tensile strained InGaN/AlInN quantum well
Wu , Dang , Huang
conference on lasers and electro optics 1 -2
2010
High optical power and low-efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier
Chih‐Chien Pan , Qimin Yan , Houqiang Fu , Yuji Zhao
Electronics Letters 51 ( 15) 1187 -1189
18
2015
Efficient and Bright Organic Radical Light‐Emitting Diodes with Low Efficiency Roll‐Off
Hwan‐Hee Cho , Sebastian Gorgon , Hsiao‐Chun Hung , Jun‐Yu Huang
Advanced Materials 35 ( 45) 2303666 -2303666
5
2023
Numerical Analysis and Optimization of a Hybrid Layer Structure for Triplet–Triplet Fusion Mechanism in Organic Light‐Emitting Diodes
Jun‐Yu Huang , Hsiao‐Chun Hung , Kung‐Chi Hsu , Chia‐Hsun Chen
Advanced Theory and Simulations 6 ( 2) 2200633 -2200633
3
2023
Monte Carlo study of noise scaling in AlGaN / GaN HFETs
Madhusudan Singh , Yuh‐Renn Wu , Tomas Palacios , Jasprit Singh
AIP Conference Proceedings 772 ( 1) 441 -442
1
2005
3D Self‐Consistent Quantum Transport Simulation for GaAs Gate‐All‐Around Nanowire Field‐Effect Transistor with Elastic and Inelastic Scattering Effects
Han‐Wei Hsiao , Yuh‐Renn Wu
physica status solidi (a) 216 ( 1) 1800524 -1800524
3
2019
Light emission polarization properties of strained (11 ̄2 2) semipolar InGaN quantum well
Hung‐Hsun Huang , Yuh‐Renn Wu
physica status solidi c 7 ( 7‐8) 1859 -1862
2010
How does phonon generation influence AlGaN/GaN HFETs?- Transient and steady state studies
Yuh-renn Wu , Jasprit Singh
device research conference 105 -106
2006
Role of Interface Roughness on Lateral Transport in InGaN
I-Lin LU , Yuh-Renn WU , John M HINKLEY , Jasprit SINGH
Proceedings of SPIE, the International Society for Optical Engineering
2010
Transient study of self-heating effects in AlGaN
Yuh-Renn WU , Jasprit SINGH
Journal of applied physics 101 ( 11)
2007
Reduction of the Specific Contact Resistance in p-type GaN-based Devices via Polarization Doping.
Jacob Melby , Jason Gu , Li Huang , Yuhrenn Wu
APS March Meeting Abstracts S1. 143 -S1. 143
2009
Strain Relaxation Induced Micro-Photoluminescence haracteristics of a Single InGaN-based Nanopillar Fabricated by Focused Ion Beam Milling
ChingHua Chiu , Peichen Yu , JR Chen , HH Yen
ECS Transactions 16 ( 7) 139 -139
2008
Analysis and optimization of InGaN laser diode with landscape model
Yuh-Renn Wu , Yen-Chang Chen , Te-Jen Kung
international semiconductor laser conference
2016
Transport in Metal-Nitride Heterostructure Junctions - A self consistent drift-diffusion-charge-control model
Umesh Mishra , Yuh-Renn Wu , Jasprit Singh , Madhusudan Singh
APS March Meeting Abstracts 2003
2003
Wearable Devices Made of a Wireless Vertical-Type Light-Emitting Diode Package on a Flexible Polyimide Substrate with a Conductive Layer
Ray-Hua Horng , Yuh-Renn Wu , Chih-Shan Tan , Han-Wen Liu
ACS Applied Electronic Materials 3 ( 2) 979 -987
7
2021
Giant gauge factor of Van der Waals material based strain sensors.
Ching-Ray Chang , Yuh-Renn Wu , Ke-Qiu Chen , Cormac Ó Coileáin
Nature Communications 12 ( 1) 2018 -2018
39
2021
Investigation of Electrical and Optical Properties of AlGaInP Red Vertical Micro-Light-Emitting Diodes With Cu/Invar/Cu Metal Substrates
Ray-Hua Horng , Yuh-Renn Wu , Shreekant Sinha , Fu-Gow Tarntair
IEEE Transactions on Electron Devices 68 ( 6) 2818 -2822
2021
Deep Source Metal Trenches in GaN-On-Si HEMTs for Relieving Current Collapse
Jian-Jang Huang , Yuh-Renn Wu , Ji-Xuan Yang , Dai-Jie Lin
IEEE Journal of the Electron Devices Society 9 557 -563
2021
2-Dimensional optoelectronic simulation for nanostructured organic-inorganic hybrid solar cells
Yu-Chih Cheng , Min-Hsiang Hsu , Chi-Kang Li , Peichen Yu
photovoltaic specialists conference 002605 -002608
2011
Transition rate in the InGaN quantum dot intermediate-band solar cell
Kuang-Chung Wang , Yuh-Renn Wu
2012 38th IEEE Photovoltaic Specialists Conference 000822 -000825
5
2012