Fabrication and Analysis of Boron Ordered Delta - Layer in Silicon.
Bonnie Elaine Weir
PhDT
1994
Detecting breakdown in dielectric layers
Glenn Baldwin Alers , Kathleen Susan Krisch , Bonnie Elaine Weir
21
1998
Detecting defects in integrated circuits
Glenn Baldwin Alers , Kathleen Susan Krisch , Bonnie Elaine Weir
19
2000
Fabrication and analysis of boron ordered delta-doping layer in silicon
Bonnie Elaine Weir
Stevens Institute of Technology
1994
Highly doped In0.52Al0.48As growth and ohmic contact formation
A Katz , W S Hobson , S N G Chu , B E Weir
Semiconductor Science and Technology 6 ( 12) 1158 -1162
2
1991
Gate oxide reliability projection to the sub-2 nm regime
B E Weir , M A Alam , J D Bude , P J Silverman
Semiconductor Science and Technology 15 ( 5) 455 -461
72
2000
MINIMIZATION OF INTERFACIAL MICROROUGHNESS FOR 13-60 Å
J SAPJETA , T BOONE , JM ROSAMILIA , PJ SILVERMAN
Science and Technology of Semiconductor Surface Preparation: Volume 477 203 -203
1997
REDUCTION OF DISLOCATION DENSITY IN HETEROEPITAXIAL MBE AND RTCVD GEXSI1-X GROWN ON PATTERNED SI SUBSTRATES
EA FITZGERALD , YH XIE , D BRASEN , ML GREEN
JOURNAL OF ELECTRONIC MATERIALS 19 ( 7) 53 -53
1990
SILICON EPITAXY AND SILICON SURFACES
LC FELDMAN , RL HEADRICK , BE WEIR
Surface Physics: Proceedings of the CCAST (World Laboratory) Symposium/Workshop Held at China Center of Advanced Science and Technology, World Laboratory, Beijing, People's Republic of China, May 27-31, 1991 9 1 -1
1992
AT&T Bell Laboratories, Murray Hill, NJ* New Jersey Institute of Technology, Newark, NJ** Charles Evans and Associates, Redwood City, CA
W SAVIN , BE WEIR , A KATZ , SNG CHU
Advanced Metallizations in Microelectronics: Volume 181 227 -227
1990
Boron Diffusion in Si'_, Ge, Strained Layers
N MORIYA , CA KING , LC FELDMAN , HS LUFTMAN
1/f Noise in the Tunneling Current of thin Gate Oxides
G. B. Alers , D. Monroe , K. S. Krisch , B. E. Weir
MRS Proceedings 428
7
1996
Soft Breakdown in Ultra-Thin Oxides
B. E. Weir , P. J. Silverman , G. B. Alers , D. Monroe
MRS Proceedings 567 301
7
1999
Relationship between Interfacial Roughness and Dielectric Reliability for Silicon Oxynitride Gate Dielectrics Processed with Nitric Oxide
W. Gladden , Y. Ma , C. Y. Sung , W. N. Lennard
MRS Proceedings 567 289
8
1999
Pt/Ti/n-InP nonalloyed ohmic contacts formed by rapid thermal processing
A. Katz , B. E. Weir , S. N. G. Chu , P. M. Thomas
Journal of Applied Physics 67 ( 8) 3872 -3875
28
1990
Ordered monolayer structures of boron in Si(111) and Si(100)
R. L. Headrick , B. E. Weir , A. F. J. Levi , B. Freer
Journal of Vacuum Science and Technology 9 ( 4) 2269 -2272
17
1991
Superior output linearity of optimized double heterostructure vertical‐cavity top‐emitting lasers
LW Tu , EF Schubert , YH Wang , BE Weir
Applied Physics Letters 66 ( 18) 2315 -2317
1995
Electrical characterization of an ultrahigh concentration boron delta‐doping layer
B. E. Weir , L. C. Feldman , D. Monroe , H.‐J. Grossmann
Applied Physics Letters 65 ( 6) 737 -739
28
1994
Epitaxially stabilized GexSn1−x diamond cubic alloys
E. A. Fitzgerald , P. E. Freeland , M. T. Asom , W. P. Lowe
Journal of Electronic Materials 20 ( 6) 489 -501
34
1991
Properties of Pt/Ti Contacts to III-V Materials
A. Katz , S. Nakahara , S. N. G. Chu , B. E. Weir
MRS Proceedings 216
1990