引用次数
引用: 5,161
H-指数: 33
I10-指数 : 72
出版物: 193
A Two Terminal Vertical Selector Device for Bipolar RRAM
Sandip Lashkare , Prateek Karkare , Udayan Ganguly , Satheesh Kuppurao
Meeting Abstracts ( 37) 2804 -2804
1
2012
Metal-molecule-semiconductor heterostructure devices
Saurabh Lodha
APS 2004
2004
Electrical-Equivalent van der Waals Gap for Two-Dimensional Bilayers
Dhirendra Vaidya , Saurabh Lodha , Swaroop Ganguly
Physical review applied 10 ( 3) 034070
1
2018
Tunable optical and electrical properties of thermal and plasma-enhanced atomic layer deposited Si-rich SixTi1−xO2 thin films
Jayeeta Biswas , Saurabh Lodha , Prerna Goradia , Geetika Bajaj
Journal of Applied Physics 129 ( 5) 055303
2021
Electrically Tunable Room Temperature Hysteresis Crossover in Underlap MoS2 Field-Effect Transistors
Saurabh Lodha , Himani Jawa , Abin Varghese , Abin Varghese
ACS Applied Materials & Interfaces 13 ( 7) 9186 -9194
2021
Silicon carbide planar junctionless transistor for low-medium voltage power electronics
Saurabh Lodha , Swaroop Ganguly , Suvendu Nayak , Boddepalli SanthiBhushan
Journal of Physics Communications 5 ( 2) 025009
2021
Fully/partially suspended gate SiC-based FET for power applications
Saurabh Lodha , Swaroop Ganguly , Suvendu Nayak
2021 IEEE Latin America Electron Devices Conference (LAEDC)
2021
Hybrid gate dielectric with Si3N4 stressor for LDMOSFET
Saurabh Lodha , Swaroop Ganguly , Suvendu Nayak
2021 IEEE Latin America Electron Devices Conference (LAEDC)
2021
Modeling Charge Control in Heterostructure Nanoscale Transistors
Dhirendra Vaidya , Saurabh Sant , Arjun Hegde , Saurabh Lodha
Physics of Semiconductor Devices 291 -294
2
2014
Ge n-channel FinFET performance enhancement using low work function metal-interfacial layer-Ge contacts
Prashanth P. Manik , Sachin Dev , Nayana Remesh , Yaksh Rawal
symposium on vlsi technology 1 -2
2017
Device structure for electronic transport through individual molecules using nanoelectrodes
Subhasis Ghosh , Henny Halimun , Ajit Kumar Mahapatro , Jaewon Choi
Applied Physics Letters 87 ( 23) 233509
49
2005
Metal/molecule/p-type GaAs heterostructure devices
Saurabh Lodha , David B. Janes
Journal of Applied Physics 100 ( 2) 024503
32
2006
Optoelectronic and photonic devices based on transition metal dichalcogenides
Kartikey Thakar , Saurabh Lodha
Materials Research Express 7 ( 1) 014002
69
2020
Multilayer ReS2 Photodetectors with Gate Tunability for High Responsivity and High-Speed Applications.
Kartikey Thakar , Bablu Mukherjee , Sameer Grover , Naveen Kaushik
ACS Applied Materials & Interfaces 10 ( 42) 36512 -36522
57
2018
Exclusive T2 MRI contrast enhancement by mesoporous carbon framework encapsulated manganese oxide nanoparticles
Kashmiri Deka , Anupam Guleria , Dinesh Kumar , Jayeeta Biswas
Current Applied Physics 20 ( 1) 89 -95
1
2020
Fermi level unpinning in ex situ Schottky contacts on n-GaAs capped with low-temperature-grown GaAs
Saurabh Lodha , David B. Janes , Nien-Po Chen
Applied Physics Letters 80 ( 23) 4452 -4454
16
2002
Contact resistivity reduction through interfacial layer doping in metal-interfacial layer-semiconductor contacts
Shashank Gupta , Prashanth Paramahans Manik , Ravi Kesh Mishra , Aneesh Nainani
Journal of Applied Physics 113 ( 23) 234505
108
2013
Carrier Selective Back Contact (CSBC) Solar Cell Using Transition Metal Oxides
Astha Tyagi , Kunal Ghosh , Anil Kottantharayil , Saurabh Lodha
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)
1
2017
Characterization of gold contacts in GaAs-based molecular devices: Relating structure to electrical properties
Patrick D. Carpenter , Saurabh Lodha , David B. Janes , Amy V. Walker
Chemical Physics Letters 472 ( 4) 220 -223
6
2009
Schottky barrier heights for Au and Pd contacts to MoS2
Naveen Kaushik , Ankur Nipane , Firdous Basheer , Sudipta Dubey
Applied Physics Letters 105 ( 11) 113505
237
2014