InGaN-Based Double Heterostructure Field Effect Transistor and Method of Forming the Same
Oleg Laboutin , Wayne Johnson , Yu Cao
6
2013
The Resurgence of III-N Materials Development: InAlN and GaN-on-Si
Oleg Laboutin , Yu Cao , Wayne Johnson
Meeting Abstracts ( 33) 2194 -2194
2011
Double aluminum nitride spacers for nitride high electron-mobility transistors
Oleg Laboutin , Yu Cao , Wayne Johnson
3
2013
Improved Off-State Stress Critical Voltage on AlGaN/GaN High Electron Mobility Transistors Utilizing Pt/Ti/Au Gate Structure
Brent P. Gila , S. J. Pearton , Tsung-Sheng Kang , Chien-Fong Lo
Meeting Abstracts ( 31) 2082 -2082
2011
Lateral GaN PN junction diode enabled by sidewall regrowth
Rongming Chu , Yu Cao
2019
Quantum Hall Effect in an Epitaxial Nitride Semiconductor/Superconductor Heterostructure
D. Scott Katzer , Brian Downey , Huili Xing , Virginia Wheeler
Bulletin of the American Physical Society
2020
Polarization-engineering in group III-nitride heterostructures: New opportunities for device design
Patrick Fay , Thomas Kosel , Jai Verma , Satyaki Ganguly
Physica Status Solidi (a) 208 ( 7) 1511 -1516
67
2011
Gallium Nitride Monolithic Microwave Integrated Circuits for Compact Ka-Band Earth Science Remote Sensing Frontends
Robert Lin , Shannon Brown , Eastwood Im , James Hoffman
radio and wireless symposium 60 -63
2021
An all-epitaxial nitride heterostructure with concurrent quantum Hall effect and superconductivity.
D. Scott Katzer , David A. Muller , Virginia D. Wheeler , Brian P. Downey
Science Advances 7 ( 8)
11
2021
18-44GHz K/Ka-band Robust-35.5dBm Reconfigurable 90nm GaN HEMT LNA
Kevin W. Kobayashi , Charles Campbell , Shuoqi Chen , Yu Cao
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) 1 -4
2020
Microwave Performance of Ferroelectric-Gated GaN HEMTs
Patrick Fay , Suman Datta , Jinqiao Xie , Jeffrey Smith
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) 1 -4
2020
Robust-5W Reconfigurable S/X-band GaN LNA using a 90nm T-gate GaN HEMT Technology
Kevin W. Kobayashi , Jose Jimenez , Charles Campbell , Shuoqi Chen
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) 1 -4
2020
Subcritical barrier AlN/GaN E/D‐mode HFETs and inverters
Tom Zimmermann , Yu Cao , Guowang Li , Gregory Snider
Physica Status Solidi (a) 208 ( 7) 1620 -1622
16
2011
Metal‐face InAlN/AlN/GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy
Jia Guo , Yu Cao , Chuanxin Lian , Tom Zimmermann
Physica Status Solidi (a) 208 ( 7) 1617 -1619
44
2011
Epitaxial growth of III-nitride electronic devices
Yu Cao
Elsevier 102 41 -113
6
2019
Controlled Synthesis of AlN/GaN Multiple Quantum Well Nanowire Structures and Their Optical Properties
Fang Qian , Megan Brewster , Sung K. Lim , Yichuan Ling
Nano Letters 12 ( 6) 3344 -3350
44
2012
MBE growth of high conductivity single and multiple AlN/GaN heterojunctions
Yu Cao , Kejia Wang , Guowang Li , Tom Kosel
Journal of Crystal Growth 323 ( 1) 529 -533
53
2011
Non-polar GaN film growth on (0 1 0) gallium oxide substrate by metal organic chemical vapor deposition
Yu Cao , Ray Li , Adam J. Williams , Rongming Chu
Journal of Materials Research 32 ( 9) 1611 -1617
2
2017
AlGaN/GaN MIS-HEMT on silicon with steep sub-threshold swing < 60 mV/dec over 6 orders of drain current swing and relation to traps
Bo Song , Mingda Zhu , Zongyang Hu , Meng Qi
ieee silicon nanoelectronics workshop 1 -2
2014
Heat-Transport Mechanisms in Superlattices
Yee Kan Koh , Yu Cao , David G. Cahill , Debdeep Jena
Advanced Functional Materials 19 ( 4) 610 -615
243
2009