Duc V. Dinh
机构: Tyndall National Institute, Cork, Ireland
每年引用次数
引用次数
引用: 802
H-指数: 17
I10-指数 : 30
出版物: 66
Size-dependent Field-emission Properties from Triangular-shapedGaN Nanostructures
DucV. Dinh , J.H. Yang , S.M. Kang , S.W. Kim
Journal of the Korean Physical Society 55 ( 1) 202 -206
5
2009
Vertical growth of ZnO nanowires on c-Al2O3 substrate by controlling ramping rate in a vapor-phase epitaxy method
W.Y. Song , J.H. Yang , D.V. Dinh , T.I. Shin
Journal of Physics and Chemistry of Solids 69 ( 5) 1486 -1490
8
2008
Influence of AlN buffer layer thickness and deposition methods on GaN epitaxial growth
J.H. Yang , S.M. Kang , D.V. Dinh , D.H. Yoon
Thin Solid Films 517 ( 17) 5057 -5060
20
2009
Surface and crystal structure of nitridated sapphire substrates and their effect on polar InN layers
D. Skuridina , D.V. Dinh , M. Pristovsek , B. Lacroix
Applied Surface Science 307 461 -467
10
2014
Analysis of Line width with Nano Fountain Pen Using Active Membrane Pumping
Kyoil Hwang , Van-Duc Dinh , Suk-Han Lee , Youn-Jea Kim
nano/micro engineered and molecular systems 759 -763
4
2007
Semipolar (202̅3) nitrides grown on 3C–SiC/(001) Si substrates
Duc V Dinh , S Presa , M Akhter , P P Maaskant
Semiconductor Science and Technology 30 ( 12) 125007
10
2015
Exciton localization in polar and semipolar (112̅2) In0.2Ga0.8N/GaN multiple quantum wells
Duc V Dinh , Silvino Presa , Pleun P Maaskant , Brian Corbett
Semiconductor Science and Technology 31 ( 8) 085006
6
2016
Untwinned semipolar (101̅3) Al x Ga1-x N layers grown on m-plane sapphire
Duc V Dinh , Nan Hu , Hiroshi Amano , Yoshio Honda
Semiconductor Science and Technology 34 ( 12) 125012
2
2019
Indium incorporation and optical properties of polar, semipolar and nonpolar InAlN
Duc V Dinh , Nan Hu , Yoshio Honda , Hiroshi Amano
Semiconductor Science and Technology 35 ( 3) 035004
3
2020
Significant contribution from impurity-band transport to the room temperature conductivity of silicon-doped AlGaN
Pietro Pampili , Duc V Dinh , Vitaly Z Zubialevich , Peter J Parbrook
Journal of Physics D 51 ( 6) 1 -6
22
2018
Growth and characterization of semipolar (11-22) InGaN by MOVPE
Duc V Dinh , Fabrice Oehler , Menno J Kappers , Shahab N Alam
on the surface 6 7 -7
High-temperature thermal annealing of nonpolar (1 0 1¯ 0) AlN layers sputtered on (1 0 1¯ 0) sapphire
Duc V Dinh , Nan Hu , Yoshio Honda , Hiroshi Amano
Journal of Crystal Growth 498 377 -380
19
2018
Nonpolar m-plane AlxGa1− xN layers grown on (10 10) sapphire by MOVPE
Duc V Dinh , Hiroshi Amano , Markus Pristovsek
Strongly nonparabolic variation of the band gap in In x Al1− x N with low indium content
Vitaly Z Zubialevich , Duc V Dinh , Shahab N Alam , Stefan Schulz
Semiconductor Science and Technology 31 ( 2) 025006 -025006
15
2015
A systematic comparison of polar and semipolar Si-doped AlGaN alloys with high AlN content
Lucia Spasevski , Gunnar Kusch , Pietro Pampili , Vitaly Z Zubialevich
Journal of Physics D: Applied Physics 54 ( 3) 035302 -035302
10
2020
Semipolar (11 2) InGaN light‐emitting diodes grown on chemically–mechanically polished GaN templates
Duc V Dinh , Mahbub Akhter , Silvino Presa , Grzegorz Kozlowski
physica status solidi (a) 212 ( 10) 2196 -2200
24
2015
Polar and semipolar (11 2) InAlN layers grown on AlN templates using MOVPE
Duc V Dinh , Haoning Li , Peter J Parbrook
physica status solidi (b) 253 ( 1) 99 -104
5
2016
Control growth orientation of semipolar GaN layers grown on 3C
Duc V Dinh , Peter J Parbrook
2018
Significant contribution from impurity-band transport to the room
Pietro Pampili , Duc V Dinh , Vitaly Z Zubialevich , Peter Parbrook
2018
Exciton localization in semipolar (112 2) InGaN multiple quantum
Duc V Dinh , Frank Brunner , Markus Weyers , Brian M Corbett
2016