Joseph Salzman
机构: Professor of Electrical Engineering
每年引用次数
引用次数
引用: 5,098
H-指数: 38
I10-指数 : 101
出版物: 229
Application of EELS and quantitative DF imaging to the characterization of V groove quantum wires
K Leifer , S Stauss , C Constantin , U Tisch
Proc.of the 1st Int. Workshop on Quant. Nonplan. Nanostructure. & Nanoelectron. Tsukuba, Japan 47
2001
Optoelectronic devices and related physical phenomena in thin film semiconductor configurations
C Lindsey , J Salzman , K Vahala , Amnon Yariv
California Instute of Technology Technical Report
1986
Three-Dimensional Device Fabrication in Monocrystalline Diamond Using FIB and a Novel Lift-Off Technique
P Olivero , S Rubanov , P Reichard , S Huntington
Microscopy and Microanalysis 11 ( S02) 856 -857
2
2005
Multimode Y-Coupler For Heterodyne Detection
E Kapon , U Sivan , J Salzman , R Arieli
Tunable Diode Laser Development and Spectroscopy Applications 0438 197 -202
1983
A kinetic model for photoenhanced organometallic chemical vapour deposition
J Salzman , E Maayan
Semiconductor Science and Technology 8 ( 6) 1094 -1100
1
1993
Selective-area MOVPE for InP-based optoelectronic components
P Tidemand-Petersson , O Albrektsen , J Salzman
Physica Scripta 1994 194 -197
1994
Simulation of x-ray diffraction profiles in imperfect multilayers by direct wave summation
S Zamir , O Steinberg , U Tisch , J Salzman
Journal of Physics D 38
6
2005
The effect of AlN buffer layer on GaN grown on (111)-oriented Si substrates by MOCVD
S Zamir , B Meyler , E Zolotoyabko , J Salzman
Journal of Crystal Growth 218 ( 2) 181 -190
57
2000
The effect of mass transfer on the photoelectrochemical etching of GaN
E Harush , S Brandon , J Salzman , Y Paz
Semiconductor Science and Technology 17 ( 6) 510 -514
11
2002
Engineering and impact of surface states on AlGaN/GaN-based hetero field effect transistors
D Mistele , O Katz , A Horn , G Bahir
Semiconductor Science and Technology 20 ( 9) 972 -978
6
2005
Surface states and persistent photocurrent in a GaN heterostructure field effect transistor
A Horn , O Katz , G Bahir , J Salzman
Semiconductor Science and Technology 21 ( 7) 933 -937
4
2006
III–V–N compounds for infrared applications
J Salzman , H Temkin
Materials Science and Engineering B-advanced Functional Solid-state Materials 50 ( 1) 148 -152
24
1997
Dependence of the refractive index of Al x Ga 1- x N on temperature and composition at elevated temperatures
U Tisch , B Meyler , O Katz , E Finkman
Journal of Applied Physics 89 ( 5) 2676 -2685
169
2001
UNSTABLE-RESONATOR-CAVITY SEMICONDUCTOR-LASERS
J Salzman , T Venkatesan , R Lang , M Mittelstein
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA A-OPTICS IMAGE SCIENCE AND VISION 1 ( 12) 1336 -1336
2
1984
Double-heterostructure lasers with facets formed by a hybrid wet and reactive-ion-etching technique (A)
J Salzman , TNC Venkatesan , S Margalit , Amnon Yariv
Journal of the Optical Society of America A 1 1303 -1303
1
1984
Experimental evidence of Bragg confinement of carriers in a quantum barrier
I Brener , M Zahler , G Lenz , J Salzman
Quantum Electronics and Laser Science Conference QThD5 -QThD5
1992
High Power Semiconductor Laser Sources.
R Lang , J Salzman , Amnon Yariv , CALIFORNIA INST OF TECH PASADENA DEPT OF APPLIED PHYSICS
California Instute of Technology Technical Report
1986
Fabrication of sub micron layers in single-crystal diamond
BA Fairchild , P Olivero , A Cimmino , M Draganski
15 th Australian Conference on Nuclear and Complementary Techniques of Analysis & 37 -37
Resistive Switching in $\hbox {HfO} _ {2} $ Probed by a Metal–Insulator–Semiconductor Bipolar Transistor
E Yalon , A Gavrilov , S Cohen , D Mistele
IEEE electron device letters 33 ( 1) 11 -13
43
2011