引用次数
引用: 7,882
H-指数: 44
I10-指数 : 150
出版物: 371
Coupled growth in the peritectic Nd-Ba-Cu-O system from highly undercooled melt
K Nagashioa , Y Takamura , K Kuribayashi
Scripta Materialia 41 ( 11) 1161 -1167
14
1999
Dendrite Break up in Solidification of Undercooled B-doped Si Melts
Itaru Jimbo , Kosuke Nagashio , Kazuhiko Kuribayashi , Hideki Okamoto
JASMA : Journal of the Japan Society of Microgravity Application = 日本マイクログラビティ応用学会誌 24 ( 1) 3 -8
2007
Solidification Behavior of Intermetallic Compounds with Strong Crystallographic Anisotropy
Kosuke Nagashio , Kiyoshi Nozaki , Kazuhiko Kuribayashi
JASMA : Journal of the Japan Society of Microgravity Application 25 ( 3) 583 -586
2008
Gap state analysis in electric-field-induced band gap for bilayer graphene.
Kosuke Nagashio , Kosuke Nagashio , Kaoru Kanayama
Scientific Reports 5 ( 1) 15789 -15789
31
2015
Comparison of device structures for the dielectric breakdown measurement of hexagonal boron nitride
Kosuke Nagashio , Kosuke Nagashio , Kenji Watanabe , Yoshiaki Hattori
Applied Physics Letters 109 ( 25) 253111
9
2016
Measuring equipment for thermophysical properties of droplet electromagnetically-levitated under axial static magnetic field
Kosuke Nagashio , Yuko Inatomi , Kazuhiko Kuribayashi , Fumitomo Onishi
Bulletin of the American Physical Society
1
2005
Interface states analysis in atomically thin MoS$_{\mathrm{2}}$ FET
Kosuke Nagashio , Nan Fang
Bulletin of the American Physical Society
2017
Gap engineering and reliability study for 2D electronics
Kosuke Nagashio
2017
Band tail interface states and quantum capacitance in a monolayer molybdenum disulfide field-effect-transistor
Kosuke Nagashio , Kosuke Nagashio , Nan Fang
arXiv: Materials Science
31
2018
2D Tunnel Field Effect Transistors (FETs) with a Stable Charge‐Transfer‐Type p+‐WSe2 Source
Kosuke Nagashio , Takashi Taniguchi , Keiji Ueno , Kenji Watanabe
Advanced electronic materials 4 ( 7) 1800207
9
2018
Quantum-mechanical effect in atomically thin MoS2 FET
Kosuke Nagashio , Nan Fang
arXiv: Applied Physics
9
2019
Understanding & Controlling the Graphene/SiO 2 Interaction
Kosuke Nagashio , Akira Toriumi
Hyomen Kagaku 33 ( 10) 552 -556
2012
Anisotropic dielectric breakdown strength of single crystal hexagonal boron nitride
Kosuke Nagashio , Kenji Watanabe , Yoshiaki Hattori , Takashi Taniguchi
The Japan Society of Applied Physics
52
2016
Interface states analysis in atomically thin MoS 2 FET
Nan Fang , Kosuke Nagashio
APS March Meeting Abstracts 2017
2017
Buffer layer engineering on graphene via various oxidation methods for atomic layer deposition
Kosuke Nagashio , Kosuke Nagashio , Nobuaki Takahashi
Applied Physics Express 9 ( 12) 125101
18
2016
Systematic Investigation of the Intrinsic Channel Properties and Contact Resistance of Monolayer and Multilayer Graphene Field-Effect Transistor
Kosuke Nagashio , Akira Toriumi , Tomonori Nishimura , Koji Kita
Japanese Journal of Applied Physics 49 ( 5) 051304
120
2010
Large Fermi energy modulation in graphene transistors with high-pressure O2-annealed Y2O3 topgate insulators
Kosuke Nagashio , Akira Toriumi , Kaoru Kanayama , Tomonori Nishimura
Applied Physics Letters 104 ( 8) 083519
19
2014
All 2D Heterostructure Tunnel Field Effect Transistors
Kosuke Nagashio
ieee electron devices technology and manufacturing conference
2021
Material and Device Structure Designs for 2D Memory Devices Based on the Floating Gate Voltage Trajectory.
Kosuke Nagashio , Takashi Taniguchi , Tomonori Nishimura , Keiji Ueno
ACS Nano 15 ( 4) 6658 -6668
2021
Understanding the Memory Window Overestimation of 2D Materials Based Floating Gate Type Memory Devices by Measuring Floating Gate Voltage
Taro Sasaki , Keiji Ueno , Takashi Taniguchi , Kenji Watanabe
Small 16 ( 47) 2004907
2020