III-V diode lasers for new emission wavelengths

H.K. Choi , S.J. Eglasha , C.A. Wang
LLabJ 3 395 -412

1
1990
Step structure of GaInAsSb grown by OMVPE (Organometallic Vapor Phase Epitaxy)

G.W. Charache , C.A. Wang
OMVPE Workshop, Ponte Verde Beach, FL (US), 05/23/1999--05/27/1999

1999
CH3I vapor etching of GaAs in a vertical rotating-disk reactor

C.W. Krueger , S. Patnaik , C.A. Wang , M. Flytzani-Stephanopoulos
Journal of Crystal Growth 169 ( 1) 51 -60

1
1996
CH3I vapor etching of masked and patterned GaAs

C.W. Krueger , C.A. Wang , D. Hsieh , M. Flytzani-Stephanopoulos
Journal of Crystal Growth 153 ( 3) 81 -89

2
1995
2003
Growth characteristics of a vertical rotating-disk OMVPE reactor

C.A. Wang , S. Patnaik , J.W. Caunt , R.A. Brown
Journal of Crystal Growth 93 ( 1) 228 -234

55
1988
Hydrodynamic dispersion in rotating-disk omvpe reactors: Numerical simulation and experimental measurements

S. Patnaik , R.A. Brown , C.A. Wang
Journal of Crystal Growth 96 ( 1) 153 -174

68
1989
Growth and characterization of InAsSb/GaInAsAb/AlGaAsAb/GaSb heterostructures for wafer-bonded thermophotovoltaic devices

C.A. Wang , D.A. Shiau , D.R. Calawa
Journal of Crystal Growth 261 ( 2) 372 -378

10
2004
Organometallic Vapor Phase Epitaxy of n-GaSb and n-GaInAsSb for Low Resistance Ohmic Contacts

C.A. Wang , D.A. Shiau , R.K. Huang , C.T. Harris
Journal of Crystal Growth 261 ( 2) 379 -384

29
2004
Fabrication Of Monolithic Two-dimensional Surface-emitting Strained-layer InGaAs/AiGaAs And AllnGaAs/AiGaAs Diode-laser Arrays With Over 50% Differential Quantum Efficiencies

W.D. Goodhue , J.P. Donnelly , C.A. Wang , G.A. Lincoln
LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics 53 -54

1
1991
Monolithic Two-dimensional Surface-emitting Horizontal-cavity Diode-laser Arrays With Up To 66% Differential Quantum Efficiencies

W.D. Goodhue , J.P. Donnelly , C.A. Wang , R.J. Bailey
Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, Smart Pixels

1992
Electrical And Structural Characterization Of Gaas Vertical-sidewall Layers Grown By Atomic Layer Epitaxy

D.B. Gladden , C.A. Wang , W.D. Goodhue , G.A. Lincoln
LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics 55 -56

1991
Characteristics of coherent two-dimensional grating surface emitting diode laser arrays during CW operation

D.P. Bour , N.W. Carlson , R. Amantea , J.M. Hammer
IEEE Journal of Quantum Electronics 27 ( 6) 1594 -1608

49
1991
Organometallic vapor phase epitaxy of high-performance strained-layer InGaAs-AlGaAs diode lasers

C.A. Wang , H.K. Choi
IEEE Journal of Quantum Electronics 27 ( 3) 681 -686

38
1991
Recent progress in GaInAsSb thermophotovoltaics grown by organometallic vapor-phase epitaxy

C.A. Wang , H.K. Choi , D.C. Oakley , G.W. Charache
Journal of Crystal Growth 195 ( 1-4) 346 -355

65
1998
In situ monitoring of GaSb, GaInAsSb, and AlGaAsSb

C.J. Vineis , C.A. Wang , K.F. Jensen , W.G. Breiland
Journal of Crystal Growth 195 ( 1-4) 181 -186

16
1998
Lattice-matched GaSb/AlGaAsSb double-heterostructure diode lasers grown by MOVPE

C.A. Wang , H.K. Choi
Electronics Letters 32 ( 19) 1779 -1781

10
1996