Controllability of the Occupation of Quantum Dot Electronic States and Determination of Minimum Valence Band Offset in InAs/GaAsSb

S.N. Dahal , D. Kuciauskas , S.P. Bremner , N.J. Ekins-Daukes
world conference on photovoltaic energy conversion 82 -86

2010
Sb dissociative surface coverage model for incorporation of antimony in GaAsSb layers grown on GaAs (0 0 1) substrates

Z. Zhang , K. Ghosh , N.N. Faleev , H. Wang
Journal of Crystal Growth 526 125231

2019
Detailed balance efficiency limits with quasi-Fermi level variations [QW solar cell]

S.P. Bremner , R. Corkish , C.B. Honsberg
IEEE Transactions on Electron Devices 46 ( 10) 1932 -1939

59
1999
The growth of GaAs and InAs dots on etched mesas: The effect of substrate temperature on mesa profile and surface morphology on dot distribution

M.E. Ikpi , P. Atkinson , S.P. Bremner , D.A. Ritchie
Journal of Crystal Growth 311 ( 15) 3911 -3917

1
2009
Detailed balance efficiency of a three level system with thermionic transitions

S.P. Bremner , C.B. Honsberg
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. 1051 -1054

3
2002
Material selection for three level transition using Quantum well structure

K. Ghosh , S.P. Bremner , C.B. Honsberg
photovoltaic specialists conference 1 -3

2
2008
Distribution of self-assembled InAs dots on patterned GaAs (1 0 0) substrates

M.E. Ikpi , P. Atkinson , S.P. Bremner , D.A. Ritchie
Journal of Crystal Growth 278 ( 1) 113 -118

4
2005
Optimum band gap combinations to make best use of new photovoltaic materials

S.P. Bremner , C. Yi , I. Almansouri , A. Ho-Baillie
Solar Energy 135 750 -757

22
2016
Site control of InAs quantum dot nucleation by ex situ electron-beam lithographic patterning of GaAs substrates

P. Atkinson , M.B. Ward , S.P. Bremner , D. Anderson
Physica E-low-dimensional Systems & Nanostructures 32 ( 1) 21 -24

23
2006
Temporal isolation of surface-acoustic-wave-driven luminescence from a lateral p–n junction using pulsed techniques

J.R. Gell , M.B. Ward , P. Atkinson , S.P. Bremner
Physica E-low-dimensional Systems & Nanostructures 40 ( 6) 1775 -1779

4
2008
Non-ideal recombination and transport mechanisms in multiple band gap solar cells

S.P. Bremner , C.B. Honsberg , R. Corkish
photovoltaic specialists conference 1206 -1209

8
2000
Influence of Sb/As soak times on the structural and optical properties of GaAsSb/GaAs interfaces

S.P. Bremner , K. Ghosh , L. Nataraj , S.G. Cloutier
Thin Solid Films 519 ( 1) 64 -68

8
2010
Molecular beam epitaxial growth of site-controlled InAs quantum dots on pre-patterned GaAs substrates

P. Atkinson , S.P. Bremner , D. Anderson , G.A.C. Jones
Microelectronics Journal 37 ( 12) 1436 -1439

10
2006
Variability of heterostructure type with thickness of barriers and temperature in the InAs/GaAsSb quantum dot system

A. Pancholi , S.P. Bremner , J. Boyle , V.G. Stoleru
Solar Energy Materials and Solar Cells 94 ( 6) 1025 -1030

16
2010
Effect of Sb and As spray on emission characteristics of InAs quantum dots with AlAs capping layer

Z Zhang , S Tan , Y Kim , Z Liu
Journal of Physics D 50 ( 40) 405104

2017
Fabrication of a self-aligned cross-wire quantum-dot chain light emitting diode by molecular beam epitaxial regrowth

M E Ikpi , P Atkinson , S P Bremner , D A Ritchie
Nanotechnology 23 ( 22) 225304

3
2012
Design trade-offs and rules for multiple energy level solar cells

C.B Honsberg , S.P Bremner , R Corkish
Physica E-low-dimensional Systems & Nanostructures 14 ( 1) 136 -141

23
2002