引用次数
引用: 17,946
H-指数: 69
I10-指数 : 253
出版物: 547
Dopant selection rules for extrinsic tunability of HfO x RRAM characteristics: A systematic study
Blanka Magyari-Kope , Dan Duncan , Yoshio Nishi , Aryan Hazeghi
symposium on vlsi technology
33
2013
Ab initio Study of Metal Interfaces with HfO$_{2}$ and SiO$_{2}$: Work Function Modulation
Luigi Colombo , Kyeongjae Cho , Yoshio Nishi , Blanka Magyari-K "ope
Bulletin of the American Physical Society
2007
Developing the electronics industry : a World Bank symposium
Bjorn Wellenius , Arnold Miller , Carl J. Dahlman , Ashoka Mody
1 -351
1993
Characterizations of Direct Band Gap PL and EL from epi-Ge on Si
Gary Shambat , Jelena Vuckovic , Jesse Lu , Krishna C. Saraswat
Meeting Abstracts ( 30) 1911 -1911
2010
In-operando synchronous time-multiplexed O K-edge x-ray absorption spectromicroscopy of functioning tantalum oxide memristors
Tolek Tyliszczak , John Paul Strachan , Catherine E. Graves , R. Stanley Williams
Journal of Applied Physics 118 ( 3) 034502
21
2015
Graphene Template for Epitaxial Growth of Pentacene and C$_{60}$ Thin Film
Kwanpyo Kim , Elton JG Santos , Tae Hoon Lee , Yoshio Nishi
Bulletin of the American Physical Society
2015
Charge sensing by altering the phase transition in VO2
Rahim Esfandyarpour , Yoshio Nishi , Ronald Davis , Suhas Kumar
Bulletin of the American Physical Society 2014
13
2014
\emph{Ab initio} Calculations for Hydrogen-Doped HfO$_{2-x}$ RRAM
Blanka Magyari-Kope , Dan Duncan , Yoshio Nishi
Bulletin of the American Physical Society
2014
Ge on Insulator (GOI) Structure Using Ge Lateral Overgrowth
Krishna Saraswat , Ju Hyung Nam , Yoshio Nishi , Takashi Fuse
Meeting Abstracts ( 17) 782 -782
2012
The effects of VUV radiation on low-k organosilicate glass (SiCOH) as measured with electron-spin resonance
J.Leon Shohet , Mikhaïl Baklanov , Panpan Xue , Yoshio Nishi
2015
Very High Performance, Ultrathin, Strained-Ge Channel, Heterostructure FETs with High Mobility and Low BTBT Leakage
Krishna Saraswat , Yoshio Nishi , Tejas Krishnamohan , Donghyun Kim
Meeting Abstracts ( 31) 1471 -1471
2006
CMOS Scaling Limit and Nanoelectronics: New materials and processes beyond silicon
Yoshio Nishi
Meeting Abstracts ( 15) 689 -689
2006
Recent Progress in Modeling the Operation of Resistive Switching Memory Devices
Blanka Magyari-Kope , Yoshio Nishi
Meeting Abstracts ( 37) 2834 -2834
2012
Ab initio Calculations for Hydrogen-Doped HfO2 -x RRAM
Blanka Magyari-Kope , Dan Duncan , Yoshio Nishi
APS March Meeting Abstracts 2014
2014
Measuring the capacitance of individual semiconductor nanowires for carrier mobility assessment.
Ryan Tu , Hongjie Dai , Li Zhang , Yoshio Nishi
Nano Letters 7 ( 6) 1561 -1565
55
2007
Carbon nanotube thermoelectric devices by direct printing: Toward wearable energy converters
Eric Pop , Yi Cui , Yi Cui , Hye Ryoung Lee
Applied Physics Letters 118 ( 17) 173901
5
2021
Oxygen vacancy mediated dielectric breakdown in ultrathin high-k gate dielectric stacks
Blanka Magyari-Kope , Yoshio Nishi
APS March Meeting Abstracts 2011
2011
Oxygen migration during resistance switching and failure of hafnium oxide memristors
John Paul Strachan , R. Stanley Williams , Niru Kumari , David Vine
arXiv: Materials Science
70
2017
Monolithic 3D Integrated Circuits
Simon Wong , Abbas El-Gamal , Peter Griffin , Yoshio Nishi
international symposium on vlsi technology, systems, and applications 1 -4
112
2007
Demonstration of Electroluminescence from Strained Ge Membrane LED
Donguk Nam , David Sukhdeo , Szu-Lin Cheng , Kevin Chih-Yao Huang
2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) 1 -2
2012