Pierre Valvin
机构: CNRS - Laboratoire Charles Coulomb (L2C) - Montpellier
每年引用次数
引用次数
引用: 3,847
H-指数: 28
I10-指数 : 49
出版物: 122
Dipolar exciton fluids in (Al,Ga)N/GaN quantum wells
Thierry Guillet , Pierre Valvin , Thierry Bretagnon , Peristera Andreakou
14th International Conference on the Physics of Light-Matter Coupling in Nanostructures - PLMCN14
2013
Time-resolved Photoluminescence spectroscopy of Zn1-XCdXO nanowires.
Manuel Lopez-Ponce , Pierre Lefebvre , Christelle Brimont , Pierre Valvin
International Workshop on ZnO and Related Materials.
2012
Optical properties of a hybrid nitride-ZnO microcavity.
Pierre Lefebvre , Christelle Brimont , Thierry Guillet , Thierry Bretagnon
SPIE-OPTO-Photonic West. "Gallium Nitride Materials & Devices VII".
2012
Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Well Structures Grown on Sapphire and GaN Substrates.
Thierry Guillet , Benoit Jouault , Pierre Valvin , Thierry Bretagnon
Collective Electronic Excitations in 2D (CEE 2D 2015) - INDEX Conference
2015
Nanophotonique et semiconducteurs nitrures : optique non-linéaire et nouveaux microlasers
Thierry Guillet , Julien Selles , Zhen Lin , Christelle Brimont
23ème Congrès de la Société Française de Physique (SFP2015)
2015
Indirect excitons in AlGaN/GaN polar quantum wells.
Thierry Guillet , Benoit Jouault , Pierre Valvin , Pierre Lefebvre
17th International Conference on Physics of Light-Matter Coupling in Nanostructures – PLMCN17.
2016
Indirect excitons in polar group III nitride quantum wells.
Thierry Guillet , Benoit Jouault , Pierre Valvin , Lise Lahourcade
8th International Conference on Materials Science and Condensed Matter Physics
2016
Dynamique de recombinaison des porteurs dans des puits quantiques GaInAsN/GaAs.
Thierry Taliercio , Thierry Guillet , Pierre Valvin , Thierry Bretagnon
9èmes Journées de la Matière Condensée
2004
Excitons in GaN/AlGaN homoepitaxial quantum wells grown along the nonpolar (02-11) direction on bulk GaN substrates.
Pierre Valvin , Boleslaw Łucznik , Henryk Teisseyre , Tadeusz Suski
6th International Conference on Nitride Semiconductors (ICNS6).
2006
Time-resolved photoluminescence of high-aluminum-content (Al,Ga)N quantum wells and epilayers emitting in the 215-255 nm range.
Pierre Valvin , Bernard Gil , H. Miyake , Pierre Lefebvre
International Workshop on Nitride semiconductors (IWN 2012).
2012
Carrier recombination dynamics in GaN/AlN quantum dots.
Thierry Taliercio , Thierry Guillet , Pierre Valvin , Thierry Bretagnon
EXMATEC'04 - 7th Int. Conf. on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies.
2004
Time resolved photoluminescence of ZnO / (Zn,Mg)O quantum wells. Internal electric field effects.
Christian Morhain , Pierre Valvin , Thierry Bretagnon , Bernard Gil
E-MRS Spring Meeting - Symposium G : ZnO and Related Materials.
2005
Indirect excitons in wide band gap semiconductors.
Thierry Guillet , Benoit Jouault , Pierre Valvin , Thierry Bretagnon
International School on Nanophotonics and Photovoltaics. INSP 2015.
2015
Polariton condensates in ZnO microcavities: generation, dynamics and localization
Thierry Guillet , Rereao Hahe , Olfa Kamoun , Christelle Brimont
15th International Conference on Light-Matter Coupling in nanostructures
2014
On the nature of light emission in polar GaN/(AlGa)N quantum wells.
Nicolas Grandjean , Masha Vladimirova , Pierre Lefebvre , Christelle Brimont
12th International Conference on Nitride Semiconductors – ICNS12.
2017
Homogeneous versus inhomogeneous broadening of the photoluminescence in polar GaN/(AlGa)N quantum wells.
Thierry Guillet , Benoit Jouault , Pierre Valvin , Denis Scalbert
International Conference on Physics of Light-Matter Coupling in Nanostructures – PLMCN18.
2017
Time-resolved photoluminescence of GaN/AlN quantum dots emitting at 300 nm
Thierry Guillet , Fabrice Semond , Pierre Valvin , Julien Selles
SPIE Photonics West
2014
Trapping dynamics of indirect excitons into electrostatic traps in GaN quantum wells.
Thierry Guillet , Pierre Valvin , Thierry Bretagnon , Benjamin Damilano
TERAMETANANO-3: Terahertz Emission, Metamaterials and Nanophotonics.
2018
Phase transition of indirect excitons in GaN quantum wells.
Thierry Guillet , Pierre Valvin , Thierry Bretagnon , Benjamin Damilano
International Workshop on Nitride semiconductors - IWN2018.
2018
Electrostatic trapping of indirect excitons in GaN/AlGaN quantum wells.
Thierry Guillet , Benoit Jouault , Pierre Valvin , Thierry Bretagnon
International Conference on the Physics of Semiconductors
2018