Four cases treated by multibanded appliance (with reference to extraction cases)
Namura S , Shimizu H , Noma S , Iwasawa T
The journal of Japan Orthodontic Society 25 ( 2) 221 -237
1966
Phase transformation kinetics of HfO2 polymorphs in ultra-thin region
Nagashio , Nakajima , Toriumi , Kita
symposium on vlsi technology 84 -85
2011
Intrinsic origin of electric dipoles formed at high-k/SiO 2 interface
Koji Kita , Akira Toriumi
international electron devices meeting 1 -4
40
2008
Life Cycle Assessment for Solar Photovoltaic Energy Systems.
ATSUSHI INABA , YASUHIKO KONDO , MITSUO KOBAYASHI , KOJI KITA
エネルギー・資源 16 ( 5) 525 -531
5
1995
Reliability analysis of Sub-micron Organic Thin Film FET.
TAIKI KOMODA , MASAKURA TEJIMA , KOJI KITA , KENTARO KYUNO
電気学会電子材料研究会資料 ( 1-9) 33 -36
2003
Permittivity Enhancement of Hf_<(1-x)> Si_xO_2 Film with High Temperature Annealing
KITA Koji , TORIUMI Akira
Extended abstracts of the... Conference on Solid State Devices and Materials 2005 232 -233
5
2005
A new Hf-based dielectric member, HfLaOx, for amorphous high-k gate insulators in advanced CMOS
YAMAMOTO Yoshiki , KITA Koji , KYUNO Kentaro , TORIUMI Akira
Extended abstracts of the... Conference on Solid State Devices and Materials 2005 252 -253
3
2005
Effect of Ultra-thin Al_2O_3 Insertion on Fermi-level Pinning at Metal/Ge Interface
NISHIMURA Tomonori , KITA Koji , TORIUMI Akira
Extended abstracts of the... Conference on Solid State Devices and Materials 2007 842 -843
1
2007
Excellent Leakage Current of Crystallized Silicon-Doped HfO_2 Films Down to Sub-nm EOT
KITA Koji , TORIUMI Akira
Extended abstracts of the... Conference on Solid State Devices and Materials 2006 390 -391
1
2006
Insulating Ga 2 O 3 layer formation at SiO 2/β-Ga 2 O 3 interface during oxygen annealing at 1000℃ and its impact on Ga 2 O 3 MOS interface characteristics
MAO QIN , KITA Koji
応用物理学会学術講演会講演予稿集 2020 2848 -2848
2020
High-Electron-Mobility Ge n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y_2O_3
Nishimura Tomonori , Lee Choong Hyun , Tabata Toshiyuki , WANG Sheng Kai
Applied physics express 4 ( 6) " 064201 -" 064201
2011
Advanced Characterization of High-k Gate Stack by Internal Photo Emission (IPE): Interfacial Dipole and Band Diagram in Al/Hf (Si) O_2/Si MOS Structure
WIDIEZ Julie , KITA Koji , NISHIMURA Tomonori , TORIUMI Akira
Extended abstracts of the... Conference on Solid State Devices and Materials 2007 1028 -1029
2007
Thermally Robust Germanium MIS Gate Stacks with LaYO_3 Dielectric Film
TAKAHASHI Toshitake , ZHAO Yi , NISHIMURA Tomonori , KITA Koji
Extended abstracts of the... Conference on Solid State Devices and Materials 2007 26 -27
2007
Direct Evidence of GeO Volatilization from GeO_2 Films and Impact of Its Suppression on GeO_2/Ge MIS Characteristics
SUZUKI Sho , KITA Koji , NOMURA Hideyuki , NISHIMURA Tomonori
Extended abstracts of the... Conference on Solid State Devices and Materials 2007 20 -21
2007
Evidence of Electron Trapping Center at Pentacene/SiO_2 Interface
PARK Chang Bum , YOKOYAMA Takamichi , NISHIMURA Tomonori , KITA Koji
Extended abstracts of the... Conference on Solid State Devices and Materials 2007 1094 -1095
2007
Experimental Evidence for Invalidity of Matthiessen's Rule for MOS Inversion Layer Mobility Analysis through Hall Factor Measurement
KITA Koji , IRIE Hiroshi , TORIUMI Akira
Extended abstracts of the... Conference on Solid State Devices and Materials 2006 1060 -1061
2006
Suppression of Leakage Current and Moisture Absorption of La_2O_3 films with Ultraviolet Ozone Post Treatment
ZHAO Yi , KITA Koji , KYUNO Kentaro , TORIUMI Akira
Extended abstracts of the... Conference on Solid State Devices and Materials 2006 402 -403
2006
Design Methodology for La_2O_3-Based Ternally Higher-κ Dielectrics
KITA Koji , ZHAO Yi , YAMAMOTO Yoshiki , KYUNO Kentaro
Extended abstracts of the... Conference on Solid State Devices and Materials 2005 254 -255
2005
Advantages of Ge (111) Surface for High Quality HfO_2/Ge Interface
TOYAMA Masahiro , KITA Koji , KYUNO Kentaro , TORIUMI Akira
Extended abstracts of the... Conference on Solid State Devices and Materials 2004 226 -227
2004
Difference between O_2 and N_2 Annealing Effects on CVD-SiO_2 Film Quality Studied by the Time-Dependent OCP Measurement
KITA Koji , KYUNO Kentaro , TORIUMI Akira
Extended abstracts of the... Conference on Solid State Devices and Materials 2004 786 -787
2004