James R. Williams
机构: Assistant Professor, Dept. of Physics and the Joint Quantum Institute, University of Maryland
每年引用次数
引用次数
引用: 4,590
H-指数: 24
I10-指数 : 27
出版物: 30
Selective equilibration of spin-polarized quantum Hall edge states in graphene.
F. Amet , J. R. Williams , K. Watanabe , T. Taniguchi
Physical Review Letters 112 ( 19) 196601
64
2014
Weak-link Josephson Junctions Made from Topological Crystalline Insulators.
R. A. Snyder , C. J. Trimble , C. C. Rong , P. A. Folkes
Physical Review Letters 121 ( 9) 097701
17
2018
Electronic transport in graphene: pn junctions, shot noise, and nanoribbons
James Ryan Williams
Harvard University
9
2009
Universal Conductance Fluctuations in Electrolyte-Gated SrTiO3 Nanostructures
David Goldhaber-Gordon , J. R. Williams , Sam W. Stanwyck , P. Gallagher
Applied Physics Letters 103 ( 21) 213504
7
2013
Josephson Detection of Time Reversal Symmetry Broken Superconductivity in SnTe Nanowires
C. J. Trimble , J. R. Williams , M.-G. Han , J. J. Cha
arXiv: Superconductivity
13
2019
Insulating behavior at the neutrality point in single-layer graphene.
F. Amet , J. R. Williams , K. Watanabe , T. Taniguchi
Physical Review Letters 110 ( 21) 216601
102
2013
Shot noise in graphene.
L. DiCarlo , J. R. Williams , Yiming Zhang , D. T. McClure
Physical Review Letters 100 ( 15) 156801 -156801
141
2008
Tunneling spectroscopy of graphene-boron-nitride heterostructures
M. Yankowitz , K. Watanabe , T. Taniguchi , D. Goldhaber-Gordon
Physical Review B 85 ( 7) 073405
73
2012
Gate-defined graphene quantum point contact in the quantum Hall regime.
S. Nakaharai , J. R. Williams , C. M. Marcus
Physical Review Letters 107 ( 3) 036602
35
2011
Snake states along graphene p-n junctions.
J. R. Williams , C. M. Marcus
Physical Review Letters 107 ( 4) 046602
86
2011
Electrolyte Gate-Controlled Kondo Effect in SrTiO 3
Menyoung Lee , J. R. Williams , Sipei Zhang , C. Daniel Frisbie
Physical Review Letters 107 ( 25) 256601
127
2011
Unconventional Josephson effect in hybrid superconductor-topological insulator devices.
J. R. Williams , A. J. Bestwick , P. Gallagher , Seung Sae Hong
Physical Review Letters 109 ( 5) 056803
323
2012
Composite fermions and broken symmetries in graphene
F. Amet , A. J. Bestwick , J. R. Williams , L. Balicas
Nature Communications 6 ( 1) 5838
104
2015
Quantum Hall effect in a gate-controlled p-n junction of graphene.
L. DiCarlo , C. M. Marcus , J. R. Williams
Science 317 ( 5838) 638 -641
1,229
2007
Gate-controlled guiding of electrons in graphene.
J. R. Williams , Tony Low , M. S. Lundstrom , C. M. Marcus
Nature Nanotechnology 6 ( 4) 222 -225
205
2011
Quantum Hall Conductance of Two-Terminal Graphene Devices
J. R. Williams , D. A. Abanin , L. DiCarlo , L. S. Levitov
Physical Review B 80 ( 4) 045408
58
2009
A high-mobility electronic system at an electrolyte-gated oxide surface
Patrick Gallagher , Menyoung Lee , Trevor A. Petach , Sam W. Stanwyck
Nature Communications 6
118
2016
Etching of graphene devices with a helium ion beam.
Pablo Jarillo-Herrero , Max C. Lemme , Britton W. H. Baugher , David C. Bell
ACS Nano 3 ( 9) 2674 -2676
367
2009
Magnetic Doping and Kondo Effect in Bi2Se3 Nanoribbons
David Goldhaber-Gordon , Yi Cui , James R. Williams , Stefan Meister
arXiv: Materials Science
150
2010
Effective Cleaning of Hexagonal Boron Nitride for Graphene Devices
James R. Williams , Kenji Watanabe , Takashi Taniguchi , David Goldhaber-Gordon
Nano Letters 12 ( 9) 4449 -4454
92
2012