Safwat William Zaki Mahmoud
机构: Professor of Physics, Head of Physics Department, Faculty of Science, Minia University, Minia, Egypt
主页: mu.edu.eg
每年引用次数
引用次数
引用: 614
H-指数: 12
I10-指数 : 15
出版物: 49
Elastic Scattering of 344.5 MeV ^{12}C Ions From ^{11}B Nucleus
M. A. Abdel-Rahman , S. A. E. Khallaf , S. K. Abdel-Rahman , S. W. Z. Mahmoud
Turkish journal of physics 22 ( 3) 219 -226
1998
Analysis of longitudinal mode wave guiding in vertical-cavity surface-emitting lasers with long monolithic cavity
S. W. Z. Mahmoud , H. J. Unold , W. Schmid , R. Jäger
Applied Physics Letters 78 ( 5) 586 -588
15
2001
Multimode modeling of digital modulation in nearly single-mode semiconductor lasers
A. Alshahrie , S. W. Z. Mahmoud
Physics of Wave Phenomena 24 ( 2) 114 -123
2
2016
Influence of pseudorandom bit format on the direct modulation performance of semiconductor lasers
MOUSTAFA AHMED , SAFWAT W Z MAHMOUD , ALAA A MAHMOUD
Pramana 79 ( 6) 1443 -1456
13
2012
Comparative study on modulation dynamic characteristics of laser diodes using RZ and NRZ bit formats
Moustafa Ahmed , Safwat W. Z. Mahmoud , Alaa A. Mahmoud
International Journal of Numerical Modelling-electronic Networks Devices and Fields 27 ( 1) 138 -152
8
2014
Static and Dynamic Transverse mode Characteristics of Vertical-Cavity Surface-Emitting Semiconductor Lasers
Safwat William Zaki Mahmoud
Optoelectronic Department, Faculty of engineering science, Ulm University, Ulm, Germany
3
2002
Correlating stimulated emission phase to the gain spectra in semiconductor lasers
Abanoub Mikhail , Safwat William Zaki Mahmoud
IOP Conference Series: Materials Science and Engineering 1269 ( 1) 012003 -012003
2022
Mode analysis of Oxide-Confined VCSELs using near-far field approaches
Safwat William Zaki Mahmoud
Annual report 1998, Dept. of Optoelectronics, University of Ulm
1998
Analysis of Longitudinal Lasing Modes in Long Cavity VCSELs
Safwat William Zaki Mahmoud
Transparent level temperature dependence of semiconductor lasers
Abanoub Mikhail Safwat William Zaki Mahmound
Australian Journal of Basic and Applied Sciences 14 ( 8) 8 -8
2020
Comparative study of semiconductor laser modulation dynamics Under non-returned to zero and returned to zero bit codes
and Alaa Mahmoud Safwat W.Z. Mahmoud , Moustafa F. Ahmed , Kamal Abdelhady
Third Arab International Conference on Physics and Material Science, Alexandria University, Egypt.
2009
Elastic scattering of {sup 12} C by {sup 12} C at intermediate energies
S AE Khallaf , MA Abdel-Rahman , SK Abdel-Raheem , S WZ Mahmoud
1996
Influence of optical feedback-induced phase on turn-on dynamics of vertical-cavity surface-emitting semiconductor lasers
S.W.Z. Mahmoud , M.F. Ahmed , R. Michalzik
midwest symposium on circuits and systems 3 1354 -1358
2
2003
Spatial investigation of transverse mode turn-on dynamics in VCSELs
S.W.Z. Mahmoud , D. Wiedenmann , M. Kicherer , H. Unold
IEEE Photonics Technology Letters 13 ( 11) 1152 -1154
5
2001
Large-area single-mode VCSELs and the self-aligned surface relief
H.J. Unold , S.W.Z. Mahmoud , R. Jager , M. Grabherr
IEEE Journal of Selected Topics in Quantum Electronics 7 ( 2) 386 -392
96
2001
Improving single-mode VCSEL performance by introducing a long monolithic cavity
H.J. Unold , S.W.Z. Mahmoud , R. Jager , M. Kicherer
IEEE Photonics Technology Letters 12 ( 8) 939 -941
81
2000
Long monolithic cavity VCSELs for high singlemode output power
H.J. Unold , M.C. Riedl , S.W.Z. Mahmoud , R. Jäger
Electronics Letters 37 ( 3) 178 -179
24
2001
Spatially varied anti-resonant DBR design for large-area single-mode VCSELs
H.J. Unold , M. Kicherer , S.W.Z. Mahmoud , R. Jager
international semiconductor laser conference 57 -58
3
2000
VCSEL Technologies for datacom
H.J. Unold 26. R. Michalzik , K.J. Ebeling , M. Kicherer , T. Knödl
in Proc. 3rd int. Conf. on Optics-Photonics Design and Fabrications, Tokyo, Japan 33 -34
2002
Noise performance and nonlinear distortion of semiconductor laser under two-tone modulation for use in analog CATV systems
Safwat W. Z. Mahmoud , Alaa Mahmoud , Moustafa Ahmed
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 29 ( 2) 280 -290
6
2016