enrico sangiorgi
机构: professore di elettronica, Università di Bologna
每年引用次数
引用次数
引用: 5,939
H-指数: 39
I10-指数 : 148
出版物: 358
Simulation study of the impact of channel doping profiles on MOSFET analog performances
C. Fiegna , E. Sangiorgi , A. Abramo
european solid-state device research conference 1 688 -691
1999
Experimental Analysis of Polarization in the Hot-Carrier Luminescence of Silicon Devices
A. Pieracci , L. Selmi , R. Bez , M. Lanzoni
european solid state device research conference 421 -424
1
1994
Sinano Institute: European Academic and Scientific Association for Nanoelectronic
F. Balestra , E. Sangiorgi , E. Parker , M. Ostling
Sixth International Nanotechnology Conference on Communications and Cooperation,
2010
Mobility in Single and Double Gate Ultra-Thin SOI MOSFETs
C. Fiegna , Luca Selmi , David Esseni , M. Mastrapasqua
European Workshop on Ultimate Integration of Silicon (ULIS) 87
2001
Monte Carlo Analysis of Signal Delays in BJTs
Luca Selmi , E. Sangiorgi , Pierpaolo Palestri
Workshop on Advances in Silicon Technology and Devices
2000
Monte CArlo Simulation of Silicon devices
B. B. Riccò , C. Fiegna , Carlo Jacoboni , E. Sangiorgi
Elsevier 155 -220
1
1993
Evidence of substrate enhanced high-energy tails in the distribution function of deep submicron MOSFETs by light emission measurements
M. Pavesi , L. Selmi , M. Manfredi , E. Sangiorgi
IEEE Electron Device Letters 20 ( 11) 595 -597
9
1999
Understanding the impact of double screen-printing on silicon solar cells by 2-D numerical simulations
P. Magnone , R. De Rose , M. Zanuccoli , D. Tonini
photovoltaic specialists conference 002177 -002180
11
2011
2-D Numerical analysis of the impact of the highly-doped profile on selective emitter solar cell performance
R. De Rose , M. Zanuccoli , P. Magnone , D. Tonini
photovoltaic specialists conference 002556 -002559
13
2011
High‐field‐induced voltage‐dependent oxide charge
P. Olivo , B. Riccò , E. Sangiorgi
Applied Physics Letters 48 ( 17) 1135 -1137
41
1986
Monte Carlo Analysis Of Hot Carrier Effects In Ultra Small Geometry MOSFETs
C. Fiegna , H. Iwai , T. Kimura , S. Nakamura
[Proceedings] 1993 International Workshop on VLSI Process and Device Modeling (1993 VPAD) 102 -103
1993
Analysis Of Collector Signal Delay In Bipolar Devices Using A Monte Carlo Method
Y. Tsuboi , C. Fiegna , E. Sangiorgi , B. Ricc
[Proceedings] 1993 International Workshop on VLSI Process and Device Modeling (1993 VPAD) 98 -99
1993
An Efficient Impact Ionization Model For Silicon Monte Carlo Simulation
C.-S. Yao , D. Chen , R.W. Dutton , F. Venturi
[Proceedings] 1993 International Workshop on VLSI Process and Device Modeling (1993 VPAD) 42 -43
6
1993
A semi-empirical model of surface scattering for Monte Carlo simulation of silicon n-MOSFETs
E. Sangiorgi , M.R. Pinto
IEEE Transactions on Electron Devices 39 ( 2) 356 -361
63
1992
Modeling of high-energy electrons in MOS devices at the microscopic level
C. Fiegna , E. Sangiorgi
IEEE Transactions on Electron Devices 40 ( 3) 619 -627
37
1993
Comments on "Determination of space-dependent electron distribution function by combined use of energy and Boltzmann transport equations: improvement, evaluation, and explanation
C. Fiegna , E. Sangiorgi
IEEE Transactions on Electron Devices 40 ( 12) 2369 -2370
1993
Comments on "Oxide-field dependence of electron injection from silicon into silicon dioxide" [with reply]
M.V. Fischetti , C. Fiegna , E. Sangiorgi , L. Selmi
IEEE Transactions on Electron Devices 41 ( 9) 1680 -1683
1
1994
Energy oscillations in electron transport across a triangular barrier
F. Venturi , E. Sangiorgi , S. Luryi , P. Poli
IEEE Transactions on Electron Devices 38 ( 3) 611 -618
9
1991
A better insight into the performance of silicon BJTs featuring highly nonuniform collector doping profiles
P. Palestri , C. Fiegna , L. Selmi , M.S. Peter
IEEE Transactions on Electron Devices 47 ( 5) 1044 -1051
14
2000
Stress induced leakage current analysis via quantum yield experiments
A. Ghetti , M. Alam , J. Bude , D. Monroe
IEEE Transactions on Electron Devices 47 ( 7) 1341 -1348
39
2000