引用次数
引用: 650
H-指数: 16
I10-指数 : 22
出版物: 100
Study of the amorphous phase of silicon using molecular dynamics simulation techniques
L.A. Marques , L. Pelaz , l. Santos , L. Bailon
spanish conference on electron devices 405 -408
2005
Morphology of as-implanted damage in silicon: a molecular dynamics study
Iván Santos , Luis A Marqués , Lourdes Pelaz , María Aboy
spanish conference on electron devices 447 -450
2005
Atomistic modeling of laser-related phenomena
María Aboy , Iván Santos , Lourdes Pelaz , Luis A. Marqués
Woodhead Publishing 79 -136
2021
Molecular dynamics simulations of damage production by thermal spikes in Ge
Pedro López , Lourdes Pelaz , Iván Santos , Luis A Marqués
Journal of Applied Physics 111 ( 3) 033519
15
2012
Recrystallization of atomically balanced amorphous pockets in Si: A source of point defects
Luis A Marqués , Lourdes Pelaz , Pedro López , Iván Santos
Physical Review B 76 ( 15) 153201
17
2007
Atomistic modeling of ion implantation technologies in silicon
Luis A. Marqués , Iván Santos , Lourdes Pelaz , Pedro López
Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms 352 148 -151
1
2015
A detailed approach for the classification and statistical analysis of irradiation induced defects
Pedro López , Iván Santos , María Aboy , Luis A. Marqués
Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms 352 156 -159
3
2015
Modeling of damage generation mechanisms in silicon at energies below the displacement threshold
Iván Santos , Luis A. Marqués , Lourdes Pelaz
Physical Review B 74 ( 17) 174115
32
2006
Characterization of octadecaborane implantation into Si using molecular dynamics
Luis A. Marqués , Lourdes Pelaz , Iván Santos , V. C. Venezia
Physical Review B 74 ( 20) 201201
28
2006
Physics Mechanisms Involved in the Formation and Recrystallization of Amorphous Regions in Si through Ion Irradiation
Iván Santos , Luis Alberto Marqués , Lourdes Pelaz , Pedro Lopez
Solid State Phenomena 139 71 -76
1
2008
Atomistic analysis of the annealing behavior of amorphous regions in silicon
Pedro López , Lourdes Pelaz , Luis A. Marqués , Iván Santos
Journal of Applied Physics 101 ( 9) 093518
13
2007
Ultrafast Generation of Unconventional {001} Loops in Si.
Luis A. Marqués , María Aboy , Iván Santos , Pedro López
Physical Review Letters 119 ( 20) 205503
1
2017
Improved physical models for advanced silicon device processing
Lourdes Pelaz , Luis A. Marqués , María Aboy , Pedro López
Materials Science in Semiconductor Processing 62 62 -79
3
2017
On the anomalous generation of {0 0 1} loops during laser annealing of ion-implanted silicon
Luis A. Marqués , María Aboy , Iván Santos , Pedro López
Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms 458 179 -183
1
2019
Structural transformations from point to extended defects in silicon : A molecular dynamics study
Luis A. Marqués , Lourdes Pelaz , Iván Santos , Pedro López
Physical Review B 78 ( 19) 193201
10
2008
{001} loops in silicon unraveled
Luis A. Marqués , María Aboy , Manuel Ruiz , Iván Santos
Acta Materialia 166 192 -201
2019
Generation of amorphous Si structurally compatible with experimental samples through the quenching process: A systematic molecular dynamics simulation study
Iván Santos , María Aboy , Luis A. Marqués , Pedro López
Journal of Non-crystalline Solids ( 1) 20 -27
2
2019
Atomistic study of the structural and electronic properties of a-Si:H/c-Si interfaces.
Iván Santos , Marco Cazzaniga , Giovanni Onida , Luciano Colombo
Journal of Physics: Condensed Matter 26 ( 9) 095001
6
2014
Molecular dynamics characterization of as-implanted damage in silicon
Iván Santos , Luis A Marqués , Lourdes Pelaz , Pedro López
Materials Science and Engineering: B 124-125 372 -375
15
2005
Atomistic simulations in Si processing: Bridging the gap between atoms and experiments
Luis A. Marqués , Lourdes Pelaz , Pedro López , María Aboy
Materials Science and Engineering B-advanced Functional Solid-state Materials 124 72 -80
7
2005