J Iwan Davies
机构: Group Technology Director, IQE plc
每年引用次数
引用次数
引用: 820
H-指数: 18
I10-指数 : 29
出版物: 77
InGaAs pin photodiodes on recessed semi-insulating GaAs substrates
P.D. Hodson , H.E. Shephard , J.I. Davies , R.H. Wallis
IEE Proceedings J Optoelectronics 135 ( 1) 2 -4
2
1988
Visible emitting materials in the AlGaInP system by MOVPE
J.I. Davies , M.D. Scott , A.W. Nelson , G.J. Clarke
III-V Compound Semiconductor Materials Growth, IEE Colloquium on
1992
GaAlInAs ternary and quaternary alloys lattice matched to InP for electronic, optoelectronic and optical device applications, by LP-MOVPE
J.I. Davies , A.C. Marshall , M.D. Scott , R.J.M. Griffiths
Journal of Crystal Growth 93 ( 1) 782 -791
17
1988
Code: A novel MOVPE technique for the single stage growth of buried ridge double heterostructure lasers and waveguides
M.D. Scott , J.R. Riffat , I. Griffith , J.I. Davies
Journal of Crystal Growth 93 ( 1) 820 -824
38
1988
Schottky barrier height enhancement on n-In0.53Ga0.47As using delta-doping
R. Nawaz , M. Elliott , S.P. Wilks , R.H. Williams
Applied Surface Science 467 -470
4
1998
Waveguide-fed PIN-HFET receiver at 2.5 Gbit/s integrated on InP
L. Giraudet , A. Bruno , E. Legros , F. Ghirardi
Seventh International Conference on Indium Phosphide and Related Materials 520 -523
1995
Commercialisation of InP based epitaxy: state of the art and beyond!
S.W. Bland , J.I. Davies , A.W. Nelson , P.K. Rees
international conference on indium phosphide and related materials 539
1997
Properties of solution TMI/sup TM/ as an OMVPE source
M.S. Ravetz , L.M. Smith , S.A. Rushworth , A.B. Leese
international conference on indium phosphide and related materials 51 -54
1999
0.1 mu m MOVPE grown InAlAs/InGaAs HEMT's with above 150 GHz operation capability
G.I. Ng , D. Pavlidis , Y. Kwon , T. Brock
broadband analog and digital optoelectronics optical multiple access networks integrated optoelectronics smart pixels 18 -21
13
1992
Comparison of GaInNAs/GaAs and strain-compensated InGaAs/GaAsP quantum wells for 1200-1300 nm diode lasers
M. Hetterich , M.D. Dawson , A.Yu. Egorov , D. Bernklau
lasers and electro optics society meeting 1 368 -369
2
1999
The Production of AIGalnP Alloys by MOVPE for the Manufacture of Visible Emitting Devices
S.J. Barne , G.C. Clarke , J.I. Davies , A.W. Nelson
Sixth International Conference Metalorganic Vapor Phase Epitaxy 219 -220
1992
Low-leakage InGaAs photodiodes grown on gaAs substrates using a graded strained-layer superlattice
P.D. Hodson , R.H. Wallis , J.I. Davies
Electronics Letters 23 ( 6) 273 -275
8
1987
Exciton electroabsorption at room temperature in InGaAs/InP multiquantum-well structures grown by atmospheric-pressure MOCVD
A.J. Moseley , M.D. Scott , P.J. Williams , R.H. Wallis
Electronics Letters 23 ( 10) 516 -518
9
1987
InGaAs/InP SAGM avalanche photodiodes incorporating a pseudoquaternary superlattice graded heterojunction grown by atmospheric-pressure MOCVD
J.R. Riffat , J.I. Davies , A.J. Moseley , J. Urquhart
Electronics Letters 23 ( 17) 914 -916
5
1987
Resonant tunnelling in AlInAs/GaInAs double barrier diodes grown by MOCVD
P.D. Hodson , D.J. Robbins , R.H. Wallis , J.I. Davies
Electronics Letters 24 ( 3) 187 -188
11
1988
AlGaInAs/InP double heterostructure lasers grown by low-pressure metal organic vapour-phase epitaxy for emission at 1300 nm
J.I. Davies , A.C. Marshall , P.J. Williams , M.D. Scott
Electronics Letters 24 ( 12) 732 -733
12
1988
Effect of barrier width on performance of long wavelength GaInAs/InP multi-quantum-well lasers
P.J. Williams , D.J. Robbins , R. Cush , M.D. Scott
Electronics Letters 24 ( 14) 859 -860
13
1988
High mobility InP epitaxial layers prepared by atmospheric pressure MOVPE using trimethylindium dissociated from an adduct with 1,2-bis(diphenyl phosphino)ethane
A.H. Moore , M.D. Scott , J.I. Davies , D.C. Bradley
Journal of Crystal Growth 77 ( 1-3) 19 -22
47
1986
In-situ monitoring of chemical reactions in MOCVD growth of ZnSe
J.I. Davies , M.J. Parrott , J.O. Williams
Journal of Crystal Growth 79 ( 1-3) 363 -370
17
1986
InGaAsP channel HFET's on InP for OEIC applications
P. Berthier , L. Giraudet , A. Scavennec , D. Rigaud
Journal of Lightwave Technology 12 ( 12) 2131 -2138
6
1994