Salim El Kazzi
机构: 2D product manager at Aixtron
每年引用次数
引用次数
引用: 1,065
H-指数: 19
I10-指数 : 30
出版物: 90
MBE growth investigations of InxGa1-xAs/GaAsySb1-y systems for TFET performance prediction
Aaron Thean , Quentin Smets , Jef Geypen , Nadine Collaert
2015
Structural and electrical investigations of III-(As,Sb) Esaki diodes for BTBT evaluation in TFET devices
Aaron Thean , Quentin Smets , Jef Geypen , Nadine Collaert
Compound Semiconductor Week 2015
2015
Band-to-band tunneling MOSCAPs for rapid TFET characterization
Aaron Thean , Quentin Smets , Devin Verreck , Clement Merckling
device research conference 63 -64
2014
Si cap passivation on InGaAs: a route to reduce oxide traps
Aaron Thean , Nadine Collaert , Thibaut Maurice , Laura Nyns
2014
METHOD FOR FORMING A TRANSITION METAL DICHALCOGENIDE - GROUP III-V HETEROSTRUCTURE AND A TUNNELING FIELD EFFECT TRANSISTOR
Clement Merckling , Salim El Kazzi
2020
Reactive plasma cleaning and restoration of transition metal dichalcogenide monolayers
Erik C. Neyts , Quentin Smets , Tatyana Rakhimova , Daniil Marinov
npj 2D Materials and Applications 5 ( 1) 1 -10
19
2021
Covalent functionalization of molybdenum disulfide by chemically activated diazonium salts
Wim Thielemans , Johan Hofkens , Steven De Feyter , Samuel Eyley
Nanoscale 13 ( 5) 2972 -2981
2021
Record 47 mV/dec top-down vertical nanowire InGaAs/GaAsSb tunnel FETs
Alireza Alian , Salim El Kazzi , Anne Verhulst , Alexey Milenin
symposium on vlsi technology 133 -134
4
2018
Demonstration of Direction Dependent Conduction through MoS2 Films Prepared by Tunable Mass Transport Fabrication
Daniele Chiappe , Massimo Mongillo , Inge Asselberghs , Salim El Kazzi
ECS Journal of Solid State Science and Technology 5 ( 11)
3
2016
Compliance at the GaSb/GaP Interface by Misfit Dislocations Array
Salim El Kazzi , Ludovic Desplanque , Christophe Coinon , Yi Wang
Advanced Materials Research 324 85 -88
2011
Diffraction studies for stoichiometry effects in BaTiO3 grown by molecular beam epitaxy on Ge(001)
Min-Hsiang Mark Hsu , Clement Merckling , Salim El Kazzi , Marianna Pantouvaki
Journal of Applied Physics 120 ( 22) 225114
3
2016
Antimony-mediated control of misfit dislocations and strain at the highly lattice mismatched GaSb/GaAs interface.
Yi Wang , Pierre Ruterana , Jun Chen , Slawomir Kret
ACS Applied Materials & Interfaces 5 ( 19) 9760 -9764
10
2013
Impact of field-induced quantum confinement on the onset of tunneling field-effect transistors: Experimental verification
Quentin Smets , Anne S. Verhulst , Koen Martens , Han Chung Lin
Applied Physics Letters 105 ( 20) 203507
8
2014
Molecular Beam Epitaxy for Steep Switching Tunnel FETs
Salim El Kazzi
Molecular Beam Epitaxy 135 -148
2019
Epitaxial registry and crystallinity of MoS2 via molecular beam and metalorganic vapor phase van der Waals epitaxy
Wouter Mortelmans , Salim El Kazzi , Benjamin Groven , Ankit Nalin Mehta
Applied Physics Letters 117 ( 3) 033101
3
2020
Record performance InGaAs homo-junction TFET with superior SS reliability over MOSFET
Alireza Alian , Jacopo Franco , Anne Vandooren , Yves Mols
international electron devices meeting 823 -826
24
2015
Fundamental limitation of van der Waals homoepitaxy by stacking fault formation in WSe2
Wouter Mortelmans , Ankit Nalin Mehta , Yashwanth Balaji , Salim El Kazzi
2D Materials 7 ( 2) 025027
7
2020
Calibration of the Effective Tunneling Bandgap in GaAsSb/InGaAs for Improved TFET Performance Prediction
Quentin Smets , Anne S Verhulst , Salim El Kazzi , David Gundlach
IEEE Transactions on Electron Devices 63 ( 11) 4248 -4254
15
2016
Material-Selective Doping of 2D TMDC through AlxOy Encapsulation.
Alessandra Leonhardt , Daniele Chiappe , Valeri V. Afanas’ev , Salim El Kazzi
ACS Applied Materials & Interfaces 11 ( 45) 42697 -42707
38
2019
Built-In Sheet Charge As an Alternative to Dopant Pockets in Tunnel Field-Effect Transistors`
Devin Verreck , Anne S. Verhulst , Yang Xiang , Dmitry Yakimets
IEEE Journal of the Electron Devices Society 6 658 -663
2
2018