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Ushijima S , Someya T , Sakai T , Nakane Y
Psychiatria et neurologia Japonica 98 ( 4) 245
2
1996
Domain wall dynamics in a single CrO2 grain
M. Huth , H. Ohno , S. Wirth , F. Porrati
Journal of Physics: Conference Series 303 ( 1) 012056
3
2011
Anomalous stability of ν = 1 bilayer quantum Hall state
M. Yasumoto , F. Matsukura , H. Ohno , O. Sugie
Solid State Communications 103 ( 8) 447 -451
8
1997
Investigation of the spin splitting energies and electron g-factor in AlSb/InAs/AlSb Quantum well
Sébastien Faniel , M. Kim , Takaaki Koga , K. Othani
5th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors
2008
Terahertz non-linear response and breakdown of the integer quantum Hall effect
J. Kono , H. Sakaki , X. G. Peralta , S. J. Allen
APS March Meeting Abstracts
1997
Phase Transition in theν=2Bilayer Quantum Hall State
A. Sawada , Z. F. Ezawa , H. Ohno , Y. Horikoshi
Physical Review Letters 80 ( 20) 4534 -4537
99
1998
Interfacial structure and transport properties of Fe/GaAs(001)
L. R. Fleet , H. Kobayashi , Y. Ohno , J.-Y. Kim
Journal of Applied Physics 109 ( 7)
9
2011
Bias voltage dependence of the electron spin injection studied in a three-terminal device based on a (Ga,Mn)As/n + -GaAs Esaki diode
M. Kohda , T. Kita , Y. Ohno , F. Matsukura
Applied Physics Letters 89 ( 1) 012103
40
2006
Spin Relaxation in GaAs(110) Quantum Wells
Y. Ohno , R. Terauchi , T. Adachi , F. Matsukura
Physical Review Letters 83 ( 20) 4196 -4199
549
1999
Effect of barrier width on the performance of quantum well infrared photodetector
Steven K.H. Sim , H.C. Liu , A. Shen , M. Gao
Infrared Physics & Technology 42 ( 3) 115 -121
7
2001
Electric field dependence of intersubband transitions in GaAs/AlGaAs single quantum wells
A. Mathur , Y. Ohno , F. Matsukura , K. Ohtani
Applied Surface Science 113114 90 -96
7
1997
Faraday rotation of ferromagnetic (Ga,Mn)As
T. Kuroiwa , T. Yasuda , F. Matsukura , A. Shen
Electronics Letters 34 ( 2) 190 -192
36
1998
Low-temperature field-effect and magnetotransport properties in a ZnO based heterostructure with atomic-layer-deposited gate dielectric
A. Tsukazaki , A. Ohtomo , D. Chiba , Y. Ohno
Applied Physics Letters 93 ( 24) 241905
20
2008
Magnetotransport studies of AlGaN/GaN heterostructures grown on sapphire substrates: Effective mass and scattering time
T. Wang , J. Bai , S. Sakai , Y. Ohno
Applied Physics Letters 76 ( 19) 2737 -2739
37
2000
Schottky Barrier Height in Fe/GaAs Films
L. R. Fleet , K. Yoshida , H. Kobayashi , Y. Ohno
IEEE Transactions on Magnetics 46 ( 6) 1737 -1740
13
2010
Atomic Interfacial Structures in Fe/GaAs Films
L. R. Fleet , H. Kobayashi , Y. Ohno , A. Hirohata
IEEE Transactions on Magnetics 47 ( 10) 2756 -2759
1
2011
Electron density dependence of the spin Hall effect in GaAs probed by scanning Kerr rotation microscopy
S. Matsuzaka , Y. Ohno , H. Ohno
Physical Review B 80 ( 24) 241305
51
2009
Low-temperature GaAs grown by molecular-beam epitaxy under high As overpressure: a reflection high-energy electron diffraction study
A. Shen , H. Ohno , Y. Horikoshi , S.P. Guo
Applied Surface Science 130 382 -386
12
1998
Spontaneous splitting of ferromagnetic (Ga, Mn)As valence band observed by resonant tunneling spectroscopy
H. Ohno , N. Akiba , F. Matsukura , A. Shen
Applied Physics Letters 73 ( 3) 363 -365
151
1998
Bilayer /ν=2 quantum Hall state in parallel high magnetic field
A. Sawada , Z.F. Ezawa , H. Ohno , Y. Horikoshi
Physica E-low-dimensional Systems & Nanostructures 6 ( 1) 615 -618
2000