Mobile Prevention from Theft (MPT): A Review
SK.Piramu Preethika, MCA, B.Ed, (MPhil), Dr A.Sasi Kumar, MCA, MPhil ,
International journal of emerging trends in science and technology
2016
Application reliability validation of GaN power devices
Sandeep R. Bahl , Jungwoo Joh , Lixing Fu , Anup Sasikumar
international electron devices meeting
48
2016
Direct Correlation between EC-0. 57 eV Trap Generation and Field-Induced Degradation in AlGaN/GaN High Electron Mobility Transistors
Anup Sasikumar , Aaron Arehart , Stephen Kaun , Man Hoi Wong
Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun
2011
Quantitative spectroscopy of reliability limiting traps in operational gallium nitride based transistors using thermal and optical methods
Anup Sasikumar
The Ohio State University
4
2014
Deep Level Trap Studies of III-V Semiconductor High Electron Mobility Transistors
Anup Sasikumar
Arizona State University
2009
EdTAM: Efficient Detection of Theft Android Mobile
SK. Piramu Preethika , A. Sasi Kumar
Indian journal of science and technology 9 ( 44) 1 -5
2016
A comparative analysis of transformer based models for figurative language classification
Taha Junaid , D Sumathi , AN Sasikumar , S Suthir
Computers and Electrical Engineering 101 108051 -108051
17
2022
Multi Attribute Utility Theory–An Over View
M Shanmuganathan , K Kajendran , AN Sasikumar , M Mahendran
International Journal of Scientific & Engineering Research 9 ( 3) 698 -706
27
2018
Optimizing Distributed Generation Resources for Power Grid Quality Improvement Using Hybrid Optimization Technique
Sengolrajan Thanasingh , AN Sasikumar , K Mahendran , R Saranya
Electric Power Components and Systems 1 -19
2023
Optimized self‐attention based cycle‐consistent generative adversarial network adopted melanoma classification from dermoscopic images
P Harini , N Bindu Madhavi , S Bhargavi Latha , AN Sasikumar
Microscopy Research and Technique 87 ( 6) 1271 -1285
2024
A Novel Approach to Analyze Medicine Feedback Reviews Using Sentimental Analysis.
AN Sasikumar , Joshila Grace
RESEARCH JOURNAL OF PHARMACEUTICAL BIOLOGICAL AND CHEMICAL SCIENCES 8 ( 2) 2775 -2780
2017
Computer vision and machine learning based facial expression analysis
A. Balasundaram , S. Ashokkumar , A. N. Sasikumar , K. Kajendran
International Journal of Advanced Trends in Computer Science and Engineering 9 ( 5) 7421 -7426
7
2020
Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy
A. Sasikumar , A. R. Arehart , S. Martin-Horcajo , M. F. Romero
Applied Physics Letters 103 ( 3) 033509
47
2013
Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors
A.R. Arehart , A. Sasikumar , S. Rajan , G.D. Via
Solid-state Electronics 80 19 -22
53
2013
Defects in GaN based transistors
A. Sasikumar , A. R. Arehart , S. W. Kaun , J. Chen
Gallium Nitride Materials and Devices IX 8986
6
2014
Spatially-resolved spectroscopic measurements of Ec − 0.57 eV traps in AlGaN/GaN high electron mobility transistors
D. W. Cardwell , A. Sasikumar , A. R. Arehart , S. W. Kaun
Applied Physics Letters 102 ( 19) 193509
68
2013
Direct correlation between specific trap formation and electric stress-induced degradation in MBE-grown AlGaN/GaN HEMTs
A. Sasikumar , A. Arehart , S. A. Ringel , S. Kaun
2012 IEEE International Reliability Physics Symposium (IRPS)
13
2012
Toward a physical understanding of the reliability-limiting E C -0.57 eV trap in GaN HEMTs
A. Sasikumar , D. W. Cardwell , A. R. Arehart , J. Lu
international reliability physics symposium
6
2014
Proton irradiation-induced traps causing V T instabilities and RF degradation in GaN HEMTs
A. Sasikumar , Z. Zhang , P. Kumar , E. X. Zhang
international reliability physics symposium 2
8
2015
Spatially-discriminating trap characterization methods for HEMTs and their application to RF-stressed AlGaN/GaN HEMTs
A. R. Arehart , A. Sasikumar , G. D. Via , B. Winningham
international electron devices meeting
30
2010