Gate Leakage and Time-Dependent Dielectric Breakdown Characteristics of LPCVD-SiNx/AlGaN/GaN MIS-HEMTs

Kai Fu , Yong Cai , Shenghou Liu , Shu Yang
11th International Conference on Nitride Semiconductors, Beijing, China 9

2015
Acid-assisted synthesis of TiO2 nanoparticles for enhancement of visible light photocatalytic efficiency

Ming Zhou , Tian-Song Deng , Zhiqun Cheng , Zhihua Dong
Journal of Physics: Conference Series 1885 ( 3) 032012

2021
Novel structural Ti/Al-based ohmic contacts on AlGaN/GaN heterostructures

Zhihua Dong , Jinyan Wang , Min Yu , Yilong Hao
international conference on solid-state and integrated circuits technology 1110 -1113

2008
Multiple Ti/Al stacks induced thermal stability enhancement in Ti/Al/Ni/Au Ohmic contact on AlGaN/GaN heterostructure

Zhihua Dong , Jinyan Wang , Rumin Gong , Shenghou Liu
ieee international conference on solid-state and integrated circuit technology 1359 -1361

1
2010
AlGaN/GaN dual gate MOS HFET for power device applications

Rumin Gong , Jinyan Wang , Shenghou Liu , Zhihua Dong
ieee international conference on solid-state and integrated circuit technology 1353 -1355

2010
High breakdown AlGaN/GaN MOSHEMT with thermal oxidized Ni/Ti as gate insulator

Zhihua Dong , Jinyan Wang , C.P. Wen , Danian Gong
Solid-state Electronics 54 ( 11) 1339 -1342

13
2010
Mechanism of leakage of ion-implantation isolated AlGaN/GaN MIS-high electron mobility transistors on Si substrate

Zhili Zhang , Liang Song , Weiyi Li , Kai Fu
Solid-state Electronics 134 39 -45

3
2017
The Leakage Current of the Schottky Contact on the Mesa Edge of AlGaN/GaN Heterostructure

Chuan Xu , Jinyan Wang , Hongwei Chen , Fujun Xu
IEEE Electron Device Letters 28 ( 11) 942 -944

26
2007
Design of 0.8–2.7 GHz High Power Class-F Harmonic-Tuned Power Amplifier with Parasitic Compensation Circuit

Zhiqun Cheng , Xuefei Xuan , Huajie Ke , Guohua Liu
Active and Passive Electronic Components 2017

3
2017
Analysis of surface roughness in Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN high electron mobility transistors

Rumin Gong , Jinyan Wang , Shenghou Liu , Zhihua Dong
Applied Physics Letters 97 ( 6) 062115

107
2010
Analysis on the new mechanisms of low resistance stacked Ti/Al Ohmic contact structure on AlGaN/GaN HEMTs

Rumin Gong , Jinyan Wang , Zhihua Dong , Shenghou Liu
Journal of Physics D 43 ( 39) 395102

7
2010
Recent progress in developing Li2S cathodes for Li–S batteries

Shiqi Li , Dan Leng , Wenyue Li , Long Qie
Energy Storage Materials 27 279 -296

90
2020
Enhanced Device Performance of AlGaN/GaN High Electron Mobility Transistors with Thermal Oxidation Treatment

Shenghou Liu , Jinyan Wang , Rumin Gong , Shuxun Lin
Japanese Journal of Applied Physics 50 ( 4)

5
2011
5.3A/400V normally-off AlGaN/GaN-on-Si MOS-HEMT with high threshold voltage and large gate swing

Zhihua Dong , Shuxin Tan , Yong Cai , Hongwei Chen
Electronics Letters 49 ( 3) 221 -222

10
2013
Fabrication of GaN nanowires by ammoniating Ga2O3/Al2O3 thin films deposited on Si(111) with radio frequency magnetron sputtering

Chengshan Xue , Qinqin Wei , Zhencui Sun , Zhihua Dong
Nanotechnology 15 ( 7) 724 -726

23
2004
Synthesis of three kinds of GaN nanowires through Ga2O3 films’ reaction with ammonia

Zhihua Dong , Chengshan Xue , Huizhao Zhuang , Shuyun Wang
Physica E-low-dimensional Systems & Nanostructures 27 ( 1) 32 -37

33
2005
Cellulose-Derived Carbon Microfiber Mesh for Binder-Free Lithium-Sulfur Batteries.

Shiqi Li , Zhiqun Cheng , Tian Xie , Zhihua Dong
Journal of Nanoscience and Nanotechnology 20 ( 9) 5629 -5635

3
2020
Ferroconcrete-inspired construction of self-supporting Li2S cathode for high-performance lithium–sulfur batteries

Shiqi Li , Junjie Jiang , Zhihua Dong , Jun Wu
Microporous and Mesoporous Materials 293 109822

12
2020
Characterization of Leakage and Reliability of SiN x Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs

Mengyuan Hua , Cheng Liu , Shu Yang , Shenghou Liu
IEEE Transactions on Electron Devices 62 ( 10) 3215 -3222

102
2015
High efficiency broadband GaN HEMT power amplifier based on three-frequency point matching method

Zhiqun Cheng , Ziming Zhao , Huajie Ke , Guohua Liu
Microwave and Optical Technology Letters 59 ( 8) 1850 -1855

6
2017