Ohmic contact between iridium film and hydrogen-terminated single crystal diamond

作者: Yan-Feng Wang , Xiaohui Chang , Shuoye Li , Dan Zhao , Guoqing Shao

DOI: 10.1038/S41598-017-09380-1

关键词: Material properties of diamondElectron beam physical vapor depositionAnnealing (metallurgy)Transmission electron microscopyDiamondOptoelectronicsIridiumOhmic contactArgonMaterials science

摘要: … After the growth of undoped homoepitaxial single crystal diamond on sample A, the surface morphology was evaluated by atomic force microscopy. The sample has a smooth surface, …

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