Impact of electron beam irradiation on the cathodoluminescence intensity for ZnO and GaN
作者： B. Dierre , X. L. Yuan , Y. Z. Yao , M. Yokoyama , T. Sekiguchi
DOI: 10.1007/S10854-008-9603-7
关键词: Binary compound 、 Gallium nitride 、 Intensity (heat transfer) 、 Optoelectronics 、 Zinc 、 Materials science 、 Mineralogy 、 Cathode ray 、 Electron beam processing 、 Luminescence 、 Cathodoluminescence 、 Electrical and Electronic Engineering 、 Atomic and Molecular Physics, and Optics 、 Electronic, Optical and Magnetic Materials 、 Condensed matter physics
摘要: We have studied the effect of electron beam irradiation on ZnO and GaN by using cathodoluminescence (CL). The bandedge emissions usually decrease during CL observation, but they can increase in certain cases, such as Zn-plane ZnO. These variations depend not only specimens conditions also nature luminescence centers chemical material surface. This work suggests that induces some modifications near surface region.
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