Mass transport and kinetic limitations in MOCVD selective-area growth
作者： Michael E. Coltrin , Christine C. Mitchell
DOI: 10.1016/S0022-0248(03)01165-5
关键词: Diffusion (business) 、 Thermodynamics 、 Damköhler numbers 、 Mineralogy 、 Kinetic energy 、 Reaction rate constant 、 Kinetics 、 Boundary layer 、 Dimensionless quantity 、 Deposition (phase transition) 、 Chemistry
摘要: Abstract The interplay between transport and kinetics in selective-area growth (SAG) of compound semiconductors is discussed. A thin-film model describing reactants across the boundary layer above surface developed. dimensionless Damkohler number ( Da ) quantitatively determines whether planar (blanket) deposition a transport-limited, reaction-rate-limited, or intermediate operating regime. Reactant profiles within rotating-disk reactor rates predicted by agree very well with numerically exact calculations. efficiency SAG was found to be strong function both pattern fill-factor θ ). extended take into account lowering “effective rate constant” (averaged over exposed masked zones). It that product θDa governs transition kinetic control process. Predictions analytical were compared 2-D calculations experimental results from InGaAs, InP, GaN SAG. simple theory appears provide an excellent qualitative quantitative description effects
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