Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon
作者： G. Masetti , M. Severi , S. Solmi
关键词: Dopant 、 Doping 、 Inorganic chemistry 、 Range (particle radiation) 、 Analytical chemistry 、 Sheet resistance 、 Electron mobility 、 Silicon 、 Arsenic 、 Helium 、 Materials science
摘要: New carrier mobility data for both arsenic- and boron-doped silicon are presented in the high doping range. The data definitely show that the electron mobility in As-doped silicon is …
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