Interface engineered HfO2-based 3D vertical ReRAM
作者： Boris Hudec , I-Ting Wang , Wei-Li Lai , Che-Chia Chang , Peter Jančovič
DOI: 10.1088/0022-3727/49/21/215102
关键词: Materials science 、 Dry etching 、 Layer (electronics) 、 Optoelectronics 、 Atomic layer deposition 、 Stack (abstract data type) 、 Resistive random-access memory 、 Voltage reduction 、 Tin 、 Nanotechnology 、 Memory cell
摘要: We demonstrate a double-layer 3D vertical resistive random access memory (ReRAM) stack implementing a Pt/HfO 2/TiN memory cell. The HfO 2 switching layer is grown by atomic …
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harvard.edu参考文章(47)
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