Solid-state image sensing device and camera system using the same
作者： Mahito Shinohara , Shunsuke Inoue
DOI:
关键词: Field-effect transistor 、 Optoelectronics 、 Materials science 、 Rectangular potential barrier 、 Transistor 、 Signal 、 Transfer (computing) 、 Pixel 、 Semiconductor 、 Photodiode
摘要: A solid-state image sensing device includes a plurality of pixels. Each pixel has photodiode, first transistor, and second transistor. The photodiode is constituted by first-conductivity-type semiconductor region second-conductivity-type region. conductivity types are opposite to each other. transistor drain formed in the transfer signal charge source which have type. At least one potential barrier provided under and/or
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