Improved photo-detection from annealed SiOx–In2−xO3−y axial heterostructure nanocolumns

摘要: SiOx–In2−xO3−y heterostructure nano-columnar arrays are synthesized on n-type Si substrate by the glancing angle deposition technique. The transmission electron microscopy image shows formation of heterostructures. A typical annealed nanocolumn consists ~70 nm SiOx and ~170 long In2−xO3−y, which is polycrystalline in nature. Two-fold improved photon absorption observed for compared with as-deposited columnar arrays. device exhibits a low leakage current 2.8 × 10−7 (−5 V). ~352 times enhanced photosensitivity at −1.5 V as one. hole-trapping process metal–annealed interface states efficiently reduces depletion width under reverse bias Schottky height junction, produces tunnelling and, therefore, photosensitivity.