作者: R. H. Magruder , D. O. Henderson , S. H. Morgan , R. A. Zuhr
DOI: 10.1557/PROC-235-383
关键词: Ion implantation 、 Laser 、 Optics 、 Materials science 、 Semiconductor 、 Refractive index 、 Absorption spectroscopy 、 Figure of merit 、 Infrared spectroscopy 、 Photonics
摘要: Recently glasses containing polarizable ions have received considerable attention because of the possibility their use as fast photonic switching media. While nonlinear index refraction n{sub 2} these is not large with other materials, they in general possess higher figure merit low absorption and speed response. Multicomponent Bi been suggested to be one more promising candidate systems. However multicomponent systems are always compatible present technology used form waveguides. Another way a glass by ion implantation. Ion implantation offers an established technique create materials that cannot obtained conventional processes due chemical and/or thermodynamical constraints. It concentration depth control possible techniques method waveguide semiconductor processing technology. In this paper we report effects 5eV laser irradiation on optical infrared properties Bi-implanted high-purity SiO{sub 2}. The bleaching phenomenon observed may useful memory material well change materials. 12 refs.