High rectification and photovoltaic effect in oxide nano-junctions
作者： T Choi , L Jiang , S Lee , T Egami , H N Lee
DOI: 10.1088/1367-2630/14/9/093056
关键词: Heterojunction 、 Physics 、 Optoelectronics 、 Oxide 、 Ferroelectricity 、 Nano- 、 Rectification 、 Epitaxy 、 Photovoltaic effect 、 Layer (electronics)
摘要: Polar oxide-based heterostructures composed of ferroelectric PbZr 0.2 Ti 0.8 O 3 and hole-doped La 0.8 Sr 0.2 MnO 3 ultrathin epitaxial films were fabricated on Nb: SrTiO 3 substrates …
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