作者: Eduardo Forniés , José Lorenzo Balenzategui , María del Carmen Alonso-García , Jose Pedro Silva , None
DOI: 10.1016/J.SOLENER.2014.08.031
关键词: Performance ratio 、 Materials science 、 Solar cell 、 Simulation 、 Irradiance 、 Standard methods 、 Reverse bias
摘要: Abstract A method to characterize the module shunt resistance ( R sh ) by measuring at reverse bias and dark conditions connected an external parallel is presented. For purpose of proving this method, two modules, MA MB, with same type cells, but different resistance, were manufactured. The values as determined proposed have been compared those obtained commercial flash solar simulators other standard procedures. Additionally, modules MB measured irradiance levels relate performance low conditions. Finally, in order evaluate relative importance a correct determination , simulation Annual Energy Yield installation made carried out means PVsyst program.