Magnetotransport measurements on a damaged surface ofp-type InAs and the annealing effect

作者: Yukihide Tsuji , Tohru Okamoto

DOI: 10.1103/PHYSREVB.70.245316

关键词: Materials scienceMagnetoresistanceDistribution functionCondensed matter physicsConduction electronSemiconductor materialsHall effectAnnealing (metallurgy)

摘要:

参考文章(12)
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