Femtosecond carrier kinetics in low-temperature-grown GaAs
作者： X. Q. Zhou , H. M. van Driel , W. W. Rühle , Z. Gogolak , K. Ploog
DOI: 10.1063/1.107996
关键词: Photoluminescence 、 Charge carrier 、 Band gap 、 Excited state 、 Photon upconversion 、 Spontaneous emission 、 Chemistry 、 Luminescence 、 Molecular physics 、 Analytical chemistry 、 Femtosecond
摘要: The carrier energy distribution and recombination kinetics in low‐temperature‐grown annealed GaAs (with 1% excess arsenic occurring as microclusters/point defects) have been time resolved at 295 K through luminescence upconversion correlation spectroscopy using an 80 fs, 720 nm Ti:sapphire laser. We infer that the radiative coefficient is same GaAs:As normal both electron hole trapping times are about 1 ps. Luminescence detected energies much 300 meV below band gap identified with delocalized states induced by As. observe presence of As gives photoexcited carriers a higher initial temperature than GaAs. Finally, since density decays faster emitted optical phonons, relaxation inhibited more effectively
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