Extremely high-speed switchmode DC-DC converters
作者： Jr. Earl William McCune
DOI:
关键词: Field-effect transistor 、 CMOS 、 Optoelectronics 、 Gallium arsenide 、 Materials science 、 Electronic circuit 、 Amplifier 、 Transistor 、 Converters 、 Electrical engineering 、 Figure of merit
摘要: Switchmode DC-DC power converters using one or more non-Silicon-based switching transistors and a Silicon-based (e.g. CMOS) controller are disclosed. The non-Silicon-based may comprise, but not necessarily limited to, III-V compound semiconductor devices such as gallium arsenide (GaAs) metal-semiconductor field effect (MESFETs) heterostructure FETs high electron mobility (HEMTs). According to an embodiment of the invention, low figure merit (FoM), TFET, allows present invention be employed in envelope tracking amplifier circuits wireless designed for high-bandwidth technologies as, example, EDGE UMTS, thereby improving efficiency battery saving capabilities devices.
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