Redox‐Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale
作者： Ilia Valov
关键词: Disruptive technology 、 Resistive random-access memory 、 Nanotechnology 、 Resistive switching 、 Atomic units 、 Microscopic description 、 Analogue electronics 、 Electrochemical kinetics 、 Engineering 、 Neuromorphic engineering
摘要: … memory, logic and analog circuits, … switching time, retention, endurance, power consumption) of different types ReRAM cells, the particular materials used as solid electrolytes appear at …
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