Silicon micromachined EBG resonator and two-pole filter with improved performance characteristics

作者: T. Euler , J. Papapolymerou

DOI: 10.1109/LMWC.2003.817132

关键词: Deep reactive-ion etchingSurface micromachiningCoplanar waveguideChebyshev filterReactive-ion etchingWaferHelical resonatorMaterials scienceOpticsResonator

摘要: A novel micromachined resonator at 45 GHz based on a defect in periodic electromagnetic bandgap structure (EBG) and two-pole Tchebyshev filter with 1.4% 0.15 dB equiripple bandwidth 2.3 loss employing this are presented letter. The is realized 400 /spl mu/m thick high-resistivity silicon wafer using deep reactive ion etching techniques. can be accessed via coplanar waveguide feeds.

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