Electrical and Switching Properties of TlBiSe2 Chalcogenide Compounds
作者： N. Kalkan , H. Bas
DOI: 10.1007/S11664-015-4025-9
关键词: Conductivity 、 Atmospheric temperature range 、 Threshold voltage 、 Negative resistance 、 Space charge 、 Materials science 、 Condensed matter physics 、 Electrical resistivity and conductivity 、 Threshold energy 、 Analytical chemistry 、 Thermal conduction
摘要: The electrical conductivity of TlBiSe2 narrow gap semiconductors prepared by the Bridgman–Stockbarger method was investigated. temperature dependence measured to establish dominant mechanism in a range between 293 K and 373 K. conduction activation energy has single value indicating existence one type investigated range. sample is controlled thermally activated mechanism. It also found that these samples exhibit current-controlled negative resistance threshold switching. voltage decreases exponentially with increasing temperature. calculated ratio half, derived from electro-thermal model for switching process. Therefore, can be explained terms model. A possible pre-switching state associated space charge limited current described.
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