A nanorods AlN layer prepared by sputtering at oblique-angle and application as a buffer layer in a GaN-based light-emitting diodes
作者： Cheng-Chiang Chen , Ya-Ying Hsu , Lung-Chien Chen , Ching-Ho Tien , Shih-Yi Chien
DOI: 10.1117/12.859657
关键词: Nanorod 、 Sapphire 、 Materials science 、 Optoelectronics 、 Sputter deposition 、 Aluminium nitride 、 Gallium nitride 、 Light-emitting diode 、 Layer (electronics) 、 Sputtering
摘要: We presents a nanorods AlN films on sapphire substrate deposited at oblique-angle by radio-frequency reactive magnetron sputtering. A layer was employed as buffer for GaN-based LEDs to improve optoelectronic characteristics of LEDs. The diameter the is in range 30-50 nm. Typical current-voltage with have forward-bias voltage 3.1 V an injection current 20 mA. output intensity initially increases linearly from 10 mA 150 light power LED nanoporous AIN about 31% higher than that without 250
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