Quantum Dot Size Dependent J-V Characteristics in Heterojunction ZnO/PbS Quantum Dot Solar Cells
作者： Jianbo Gao , Joseph M. Luther , Octavi E. Semonin , Randy J. Ellingson , Arthur J. Nozik
DOI: 10.1021/NL103814G
关键词: Fermi level 、 Quantum dot 、 Optics 、 Photocurrent 、 Backward diode 、 Schottky barrier 、 Solid-state lighting 、 Optoelectronics 、 Chemistry 、 Diode 、 Heterojunction
摘要: … of ZnO/PbS quantum dot (QD) solar cells show a QD size-… diode formed between the ZnO and PbS QD layers. We study a QD … (NC) layer and p-type PbS QD layer in series with a leaky …
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