Carrier Mobility and Shallow Impurity States in ZnSe and ZnTe
作者： M. Aven , B. Segall
关键词: Impurity 、 Condensed matter physics 、 Electron mobility 、 Materials science
摘要: … of the native defect, which vre believe to be thezinc vacancy, could be identi6ed. It is to be … I.ind' in Br-doped ZnSe. It is possible that these levels are due to the halogen dopants used, …
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