Temperature-independent unassisted pyrolytic MOCVD growth of cadmium telluride at 250°C using 2,5-dihydrotellurophene
作者： L.S. Lichtmann , J.D. Parsons , E.-H. Cirlin
DOI: 10.1016/0022-0248(90)90719-2
关键词: Growth rate 、 Metalorganic vapour phase epitaxy 、 Temperature independent 、 Nanotechnology 、 Substrate (electronics) 、 Materials science 、 Volumetric flow rate 、 Molecule 、 Pyrolytic carbon 、 Cadmium telluride photovoltaics 、 Analytical chemistry
摘要: Abstract The molecule 2,5-dihydrotellurophene (DHTe) was identified, synthesized and tested to determine its potential as a Te source for unassisted pyrolytic MOCVD growth of Hg x Cd 1- at substrate temperatures ⋍ 300°C. Experiments were concentrated on CdTe using DHTe dimethylcadmium (DMCd) source. long-term stability far exceeded theoretical expectations. Cadmium telluride rates linear function the flow rate independent temperature or above 250°C. maximum measured, 4 μm/h, obtained by flowing 800 SCCM H 2 through sublimer (sublimer 10°C). All layers grown high-resistivity substrates p-type, with carrier concentrations between 6.2×10 15 4.2×10 16 cm -3 . best electrical properties 250°C, where p-type concentration Hall mobility 80 /V·s.
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sci-hub.se 参考文章(14)
J.B. Mullin, S.J.C. Irvine, D.J. Ashen, Organometallic growth of II–VI compounds Journal of Crystal Growth. ,vol. 55, pp. 92- 106 ,(1981) , 10.1016/0022-0248(81)90276-1
S.J.C. Irvine, J.B. Mullin, J. Tunnicliffe, Photosensitisation: A stimulant for the low temperature growth of epitaxial HgTe Journal of Crystal Growth. ,vol. 68, pp. 188- 193 ,(1984) , 10.1016/0022-0248(84)90415-9
C. Jonah, P. Chandra, R. Bersohn, Anisotropic Photodissociation of Cadmium Dimethyl The Journal of Chemical Physics. ,vol. 55, pp. 1903- 1907 ,(1971) , 10.1063/1.1676327
Sorab K. Ghandhi, Ishwara Bhat, High quality Hg1−xCdxTe epitaxial layers by the organometallic process Applied Physics Letters. ,vol. 44, pp. 779- 781 ,(1984) , 10.1063/1.94916
S.J.C. Irvine, J. Giess, J.B. Mullin, G.W. Blackmore, O.D. Dosser, Epitaxial growth of CdxHg1−xTe by photo-MOVPE Materials Letters. ,vol. 3, pp. 290- 293 ,(1985) , 10.1016/0167-577X(85)90024-2
I.B. Bhat, L.M.G. Sundaram, N.R. Taskar, J.M. Borrego, S.K. Ghandhi, CdTe-InSb heterostructures grown by organometallic-vapor-phase epitaxy: Preparation and electrical properties Solid-state Electronics. ,vol. 29, pp. 257- 260 ,(1986) , 10.1016/0038-1101(86)90048-1
D.W. Kisker, R.D. Feldman, Photon assisted OMVPE growth of CdTe Journal of Crystal Growth. ,vol. 72, pp. 102- 107 ,(1985) , 10.1016/0022-0248(85)90125-3
N.R. Taskar, I.B. Bhat, S.K. Ghandhi, MOVPE growth and characteristics of CdTe on InSb substrates Journal of Crystal Growth. ,vol. 77, pp. 480- 484 ,(1986) , 10.1016/0022-0248(86)90340-4
Jan Bergman, Lars Engman, Synthesis of 2,5-dihydrotellurophene - a new heterocyclic compound Journal of the American Chemical Society. ,vol. 103, pp. 2715- 2718 ,(1981) , 10.1021/JA00400A038
D.W. Kisker, R.D. Feldman, Photolysis-assisted OMVPE growth of CdTe Materials Letters. ,vol. 3, pp. 485- 488 ,(1985) , 10.1016/0167-577X(85)90095-3